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Low voltage fast-switching PNP power transistor
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface
mounting circuits
Applications
■ LED
■ Battery charger
■ Motor and relay driver
■ Voltage regulation
2STR2215
3
2
1
SOT-23
Figure 1. Internal schematic diagram
Description
The 2STR2215 is a PNP transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary NPN is the 2STR1215.
Table 1. Device summary
Order code Marking Package Packaging
2STR2215 215 SOT-23 Tape and reel
January 2009 Rev 4 1/9
www.st.com
9
Page 2
Electrical ratings 2STR2215
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-base voltage (IE = 0) -15 V
CBO
Collector-emitter voltage (IB = 0) -15 V
CEO
Emitter-base voltage (IC = 0) -5 V
EBO
I
Collector current -1.5 A
C
Collector peak current (tP < 5 ms) -3 A
CM
Total dissipation at T
tot
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
= 25 °C 0.5 W
amb
Table 3. Thermal data
Symbol Parameter Value Unit
(1)
R
thj-amb
1. Device mounted on PCB area of 1cm
Thermal resistance junction-amb __max 250 °C/W
2
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2STR2215 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
C
CBO
Collector cut-off current
(IE =0)
Emitter cut-off current
=0)
(I
C
Collector-base
breakdown voltage
= 0)
(I
E
Collector-emitter
(1)
breakdown voltage
(IB = 0)
Emitter-base breakdown
voltage (IC = 0)
Collector-emitter
(1)
saturation voltage
Base-emitter saturation
(1)
voltage
(1)
DC current gain
Collector-base
capacitance (I
E
= 0)
V
= -15 V
CB
V
= -4 V
EB
= -100 µA
I
C
= -10 mA
I
C
= -100 µA
I
E
I
= -100 mA IB = -1 mA
C
= -1 A IB = -100 mA
I
C
= -2 A IB = -200 mA
I
C
IC = -1 A IB = -100 mA
= -50 mA V
I
C
= -500 mA V
I
C
= -1 A V
I
C
= -2 A V
I
C
= -10 V
V
CB
CE
CE
CE
CE
= -2 V
= -2 V
= -2 V
= -2 V
f = 1 MHz
-0.1 µA
-0.1 µA
-15 V
-15 V
-5 V
-0.15
-0.25
-0.40
-0.50
-0.85
-0.90 -1.25 V
200
200
280 560
130
80
20 pF
V
V
V
Resistive load
t
on
t
off
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Turn-on time
Turn-off time
IC = -1.5 A V
I
B1
= -I
= -150 mA
B2
CC
= -10 V
60
220
ns
ns
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Electrical characteristics 2STR2215
2.1 Electrical characteristics (curves)
Figure 2. DC current gain Figure 3. Collector-emitter saturation voltage
Figure 4. Base-emitter saturation voltage Figure 5. Resistive load switching time
Figure 6. Resistive load switching
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time
Figure 7. Capacitance
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2STR2215 Electrical characteristics
2.2 Test circuit
Figure 8. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data 2STR2215
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
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2STR2215 Package mechanical data
SOT-23 mechanical data
DIM.
min. typ max.
A0.891.4
A1 0 0.1
B0.3 0.51
C0.0850.18
D2.75 3.04
e0.851.05
e1 1.7 2.1
E1.2 1.6
H 2.1 2.75
L0.6
S 0.350.65
mm.
0053390_H
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Revision history 2STR2215
4 Revision history
Table 5. Document revision history
Date Revision Changes
09-Feb-2006 1 Initial release.
20-Jul-2006 2 New template.
08-Sep-2008 3 Updated the SOT-23 mechanical data.
08-Jan-2009 4
Updated Figure 1: Internal schematic diagram
Updated statement ECOPACK
®
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2STR2215
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