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Low voltage fast-switching PNP power transistor
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface
mounting circuits
2STR2160
Preliminary Data
Applications
■ LED
■ Battery charger
■ Motor and relay driver
■ Voltage regulation
Figure 1. Internal schematic diagram
SOT-23
Description
The device in a PNP transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
The complementary NPN is the 2STR1160.
Table 1. Device summary
Order code Marking Package Packing
2STR2160 260 SOT-23 Tape and reel
June 2008 Rev 1 1/9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
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Content 2STR2160
Content
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
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2STR2160 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-base voltage (IE = 0) -60 V
CBO
Collector-emitter voltage (IB = 0) -60 V
CEO
Emitter-base voltage (IC = 0) -5 V
EBO
I
Collector current -1 A
C
Collector peak current (tP < 5ms) -2 A
CM
Total dissipation at T
tot
Storage temperature -65 to 150 °C
stg
Max. operating junction temperature 150 °C
T
J
= 25°C 0.5 W
amb
Table 3. Thermal data
Symbol Parameter Value Unit
(1)
R
thj-amb
1. Device mounted on PCB area of 1 cm
Thermal resistance junction-amb max 250 °C/W
2
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Electrical characteristics 2STR2160
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
EBO
Collector cut-off current
(IE =0)
Emitter cut-off current
(IC =0)
Collector-base
V
(BR)CBO
breakdown voltage
= 0)
(I
E
Collector-emitter
(1)
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
breakdown voltage
= 0)
(I
B
Emitter-base breakdown
voltage (IC = 0)
Collector-emitter
(1)
saturation voltage
Base-emitter saturation
(1)
voltage
(1)
DC current gain
Resistive load
t
on
t
off
1. Pulsed duration = 300 µs, duty cycle ≤1.5%
Turn-on time
Turn-off time
= -60 V
V
CB
= -5 V
V
EB
I
= -100 µA
C
I
= -10 mA
C
I
= -100 µA
E
= -0.5 A IB = -50 mA
I
C
= -1 A IB = -100 mA
I
C
IC = -1 A IB = -100 mA
IC = -0.5 A V
= -1 A V
I
C
= -2 A V
I
C
= -1.5 A V
I
C
= -IB2 = -150 mA
I
B1
= 5 V
V
BB(off)
CE
CE
CE
CC
= -2V
= -2 V
= -2 V
= -10 V
-0.1 µA
-0.1 µA
-60 V
-60 V
-5 V
260
480mVmV
1.3 V
180
560
45
30
220
500
ns
ns
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2STR2160 Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data 2STR2160
SOT-23 mechanical data
DIM.
min. typ max.
A0.891.4
A1 0 0.1
B0.3 0.51
C0.0850.18
D2.75 3.04
e0.851.05
e1 1.7 2.1
E1.2 1.6
H 2.1 2.75
L0.6
S 0.350.65
mm.
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0053390_G
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2STR2160 Package mechanical data
Figure 2. SOT-23 footprint
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Revision history 2STR2160
4 Revision history
Table 5. Document revision history
Date Revision Changes
18-Jun-2008 1 Initial release
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2STR2160
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