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Low voltage fast-switching PNP power bipolar transistor
Features
■ The device is qualified for automotive
application
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Surface mounting device in medium power
SOT-223 package
Applications
■ Emergency lighting
■ LED
■ CCFL drivers (back lighting)
■ Voltage regulation
■ Relay driver
2STN2540-A
4
3
2
1
SOT-223
Figure 1. Internal schematic diagram
Description
The device in a PNP transistor manufactured
using new “PB-HCD” (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Table 1. Device summary
Order code Marking Package Packaging
2STN2540-A N2540 SOT-223 Tape & reel
January 2008 Rev 2 1/9
www.st.com
9
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Electrical ratings 2STN2540-A
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-base voltage (IE = 0) -40 V
CBO
Collector-emitter voltage (IB = 0) -40 V
CEO
Emitter-base voltage (IC = 0) -6 V
EBO
I
Collector current -5 A
C
Collector peak current (tP < 5ms) -10 A
CM
Base peak current (tP < 5ms) -2 A
BM
Total dissipation at T
tot
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
= 25°C 1.6 W
amb
Table 3. Thermal data
Symbol Parameter Value Unit
(1)
R
thj-amb
1. Device mounted on PCB area of 1cm
Thermal resistance junction-amb __max 78 °C/W
2
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2STN2540-A Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
C
CBO
EBO
CBO
t
on
t
s
t
f
Collector cut-off current
=0)
(I
E
Emitter cut-off current
=0)
(I
C
(1)
Collector-emitter
saturation voltage
Base-emitter saturation
(1)
voltage
(1)
Base-emitter on voltage
(1)
DC current gain
Collector-base
capacitance
Resistive load
Turn-on time
Storage time
Fall time
= -30 V
V
CB
= -5 V
V
EB
I
= -0.5 A IB = -5 mA
C
= -1 A IB = -10 mA
I
C
I
= -2 A IB = -200 mA
C
I
= -5 A IB = -500 mA
C
I
= -5 A IB = -500 mA
C
V
= -2 V IC = -2 A
CE
I
= -0.5 A V
C
I
= -1 A V
C
= -2 A V
I
C
= -5 A V
I
C
I
= 0 V
E
CE
CE
CE
CE
CB
= -2 V
= -2 V
= -2 V
= -2 V
= -10 V
f = 1MHz
= -1 A _ V
I
C
-I
= I
B1
B2
= 30 µA
T
p
= -0.1 A
CC
= -10 V
250
200
150
50
-0.1 µA
-0.1 µA
-120
-80
-120
-140
-350
-180
-200
-450
-1.3 V
-1.25 V
80 pF
75
426
62
mV
mV
mV
mV
ns
ns
ns
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
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Electrical characteristics 2STN2540-A
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. DC current gain
Figure 4. Collector-emitter saturation
voltage
Figure 5. Base-emitter saturation
voltage
Figure 6. Base-emitter on voltage Figure 7. Resistive load switching
times
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2STN2540-A Electrical characteristics
Figure 8. Resistive load switching
times
2.2 Test circuit
Figure 10. Resistive load switching test circuit
Figure 9. Capacitance
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data 2STN2540-A
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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2STN2540-A Package mechanical data
Figure 11. Package mechanical data
SOT-223 mechanical data
DIM.
mm.
min. typ max.
A 1.80
A1 0.02 0.1
B 0.60 0.70 0.85
B1 2.90 3.00 3.15
c 0.24 0.26 0.35
D6.30 6.50 6.70
e2.30
e1 4.60
E 3.30 3.50 3.70
H 6.70 7.00 7.30
V 10
o
0046067_L
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Revision history 2STN2540-A
4 Revision history
Table 5. Document revision history
Date Revision Changes
23-Oct-2007 1 Initial release
15-Jan-2008 2
Updated max package dimensions in lines “B” and “c” of the package
mechanical data, Figure 11.
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2STN2540-A
y
y
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