Page 1
Features
2STC5200
High power NPN epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STA1943
■ Fast-switching speed
■ Typical f
= 30 MHz
T
CEO
> 230V
Application
■ Audio power amplifier
Description
This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2STC5200 2STC5200 TO-264 Tube
December 2007 Rev 2 1/9
www.st.com
9
Page 2
Electrical ratings 2STC5200
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
CBO
CEO
EBO
I
I
CM
P
T
T
C
tot
stg
Collector-base voltage (IE = 0) 230 V
Collector-emitter voltage (IB = 0) 230 V
Emitter-base voltage (IC = 0) 5 V
Collector current 15 A
Collector peak current 30 A
Total dissipation at TC = 25°C 150 W
Storage temperature -55 to 150 °C
Operating junction temperature 150 °C
J
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJ-case
Thermal resistance junction-case Max 0.83 °C/W
2/9
Page 3
2STC5200 Electrical characteristics
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
h
BE
FE
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Collector-emitter breakdown
(1)
voltage (I
= 0)
B
Collector-base breakdown
voltage (I
Emitter-base breakdown
(1)
voltage (I
Collector-emitter saturation
(1)
= 0)
E
= 0)
C
voltage
Base-emitter voltage
DC current gain
V
CB
V
EB
= 50 mA
I
C
= 100 µA
I
C
= 1 mA
I
E
I
= 8 A IB = 800 mA
C
I
= 7 A V
C
= 1 A V
I
C
I
= 7 A V
C
Resistive load
t
on
t
t
f
C
CBO
1. Pulsed: pulse duration = 300 µs, duty cycle < 1.5%
Turn-on time
Storage time
s
Fall time
f
Transition frequency
T
Collector-base capacitance
(I
= 0)
E
V
CC
I
B1
= 1 A V
I
C
V
CB
= 230 V
= 5 V
= 5 V
CE
= 5 V
CE
= 5 V
CE
= 60 V IC = 5A
= -I
= 0.5 A
B2
= 5 V
CE
= 10 V f = 1 MHz
5µA
5µA
230 V
230 V
5V
3V
1.5 V
80
160
35
0.24
4.7
0.6
µs
µs
µs
30 MHz
150 pF
3/9
Page 4
Electrical characteristics 2STC5200
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. Output characteristics Figure 5. DC current gain
Figure 6. Collector-emitter saturation voltage Figure 7. Collector current vs base-emitter
4/9
voltage
Page 5
2STC5200 Electrical characteristics
2.2 Test circuit
Figure 8. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
5/9
Page 6
Package mechanical data 2STC5200
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
6/9
Page 7
2STC5200 Package mechanical data
TO-264 Mechanical data
Dim.
Min. Typ Max.
A4.805.20
A1 2.50 3.10
b 0.90 1.0 1.25
b1 2.5
b22.8
c 0.50 0.60 0.85
D 25.6 26.4
E19.80 20.20
e5.15 5.75
L19.50 20.50
L1 2.302.70
øP 3.55 3.65
mm.
7/9
Page 8
Revision history 2STC5200
4 Revision history
Table 5. Document revision history
Date Revision Changes
19-Jun-2007 1 Initial release.
11-Dec-2007 2 Document promoted from preliminary data to datasheet.
8/9
Page 9
2STC5200 Revision history
y
y
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