Page 1
Features
2STC4468
High power NPN epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STA1695
■ Typical f
■ Fully characterized at 125
= 20 MHz
t
CEO
o
C
= 140 V
Application
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2STC4468 2STC4468 TO-3P Tube
November 2008 Rev 2 1/9
www.st.com
9
Page 2
Electrical ratings 2STC4468
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
CBO
CEO
EBO
I
CM
P
T
T
Collector-base voltage (IE = 0) 200 V
Collector-emitter voltage (IB = 0) 140 V
Emitter-base voltage (IC = 0) 6 V
I
Collector current 10 A
C
Collector peak current (tP < 5 ms) 20 A
Total dissipation at Tc = 25 °C 100 W
tot
Storage temperature -65 to 150 °C
stg
Max. operating junction temperature 150 °C
J
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ____max 1.25 °C/W
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Page 3
2STC4468 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
Table 4.
Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
h
C
BE
FE
f
T
CBO
Collector cut-off current
(I
= 0)
E
Emitter cut-off current
(I
= 0)
C
Collector-emitter
(1)
breakdown voltage (I
B
= 0)
Collector-base breakdown
voltage (I
Emitter-base breakdown
(1)
voltage (I
Collector-emitter
(1)
= 0)
E
= 0)
C
saturation voltage
Base-emitter voltage V
DC current gain
Transition frequency IC = 0.5 A V
Collector-base
capacitance (I
E
= 0)
= 200 V 0.1 µA
V
CB
= 6 V 0.1 µA
V
EB
= 50 mA 140 V
I
C
= 100 µA 200 V
I
C
= 1 mA 6 V
I
E
I
= 5 A IB = 500 mA
C
= 7 A IB = 700 mA
I
C
= 5 V IC = 5 A 1.3 V
CE
= 3 A V
I
C
= 5 A V
I
C
= 10 V f = 1 MHz 150 pF
V
CB
= 4 V
CE
= 4 V
CE
= 12 V 20 MHz
CE
70
50
0.5
0.7
140
Resistive Load
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
= 60 V IC = 5 A
V
CC
I
= -I
B2
= 0.5 A
B1
0.22
4.3
0.5
V
V
µs
µs
µs
1. Pulse duration = 300 µs, duty cycle ≤ 1.5 %
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Page 4
Electrical characteristics 2STC4468
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Output characteristics
Figure 4. DC current gain Figure 5. Collector-emitter saturation
voltage
Figure 6. Base-emitter voltage Figure 7. Base-emitter voltage
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Page 5
2STC4468 Electrical characteristics
2.2 Test circuit
Figure 8. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
5/9
Page 6
Package mechanical data 2STC4468
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Page 7
2STC4468 Package mechanical data
TO-3P Mechanical data
DIM.
A4.6 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15 .40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
P 3.10 3.30
Q5
Q1 3. 80
MIN. TYP MAX.
mm.
7/9
Page 8
Revision history 2STC4468
4 Revision history
Table 5. Document revision history
Date Revision Changes
21-May-2007 1 Initial release.
07-Nov-2008 2 Document status promoted from preliminary data to datasheet
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Page 9
2STC4468
y
y
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