Page 1
Features
2STA1695
High power PNP epitaxial planar bipolar transistor
■ High breakdown voltage V
■ Complementary to 2STC4468
■ Typical f
■ Fully characterized at 125
= 20 MHz
t
CEO
o
C
= -140 V
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2STA1695 2STA1695 TO-3P Tube
November 2008 Rev 2 1/9
www.st.com
9
Page 2
Electrical ratings 2STA1695
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
CBO
CEO
EBO
I
I
CM
P
T
T
C
tot
stg
J
Collector-base voltage (IE = 0) -140 V
Collector-emitter voltage (IB = 0) -140 V
Emitter-base voltage (IC = 0) -6 V
Collector current -10 A
Collector peak current (tP < 5 ms) -20 A
Total dissipation at Tc = 25 °C 100 W
Storage temperature -65 to 150 °C
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case ______max 1.25 °C/W
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Page 3
2STA1695 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
Table 4 . Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
BE
h
C
CBO
EBO
CBO
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Collector-emitter breakdown
voltage (I
= 0)
B
Collector-base breakdown
voltage (I
Emitter-base breakdown
(1)
voltage (I
Collector-emitter saturation
(1)
= 0)
E
= 0)
C
voltage
(1)
Base-emitter voltage V
DC current gain
FE
f
Transition frequency IC = -0.5 A V
T
Collector-base capacitance
= 0)
(I
E
V
V
I
I
I
I
I
I
I
V
= -140 V -0.1 µA
CB
= -6 V -0.1 µA
EB
= -50 mA -140 V
C
= -100 µA -140 V
C
= -1 mA -6 V
E
= -5 A IB = -500 mA
C
= -7 A IB = -700 mA
C
= -5 V IC = -5 A -1.3 V
CE
= -3 A V
C
= -5 A V
C
= -10 V f = 1 MHz 225 pF
CB
Resistive load
on
stg
t
f
Turn-on time
Storage time
Fall time
t
t
1. Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
= -5 A V
I
C
= -I
I
B1
= -0.5 A
B2
= -4 V
CE
= -4 V
CE
= -12 V 20 MHz
CE
= -60 V
CC
70
50
0.24
1.2
0.24
-0.5
-0.7VV
140
µs
µs
µs
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Page 4
Electrical characteristics 2STA1695
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Output characteristics
Figure 4. DC current gain Figure 5. Collector-emitter saturation voltage
Figure 6. Base-emitter voltage Figure 7. Base-emitter voltage
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Page 5
2STA1695 Electrical characteristics
2.2 Test circuit
Figure 8. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Page 6
Package mechanical data 2STA1695
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Page 7
2STA1695 Package mechanical data
TO-3P Mechanical data
DIM.
A4.6 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0 .55 0 .60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15 .40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
P 3.10 3.30
Q5
Q1 3. 80
MIN. TYP MAX.
mm.
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Page 8
Revision history 2STA1695
4 Revision history
Table 5. Document revision history
Date Revision Changes
18-May-2007 1 Initial release
06-Nov-2008 2 Document status promoted from preliminary data to datasheet.
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Page 9
2STA1695
y
y
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