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2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V
■ Complementary to 2ST2121
■ Typical f
■ Fully characterized at 125
= 25 MHz
t
CEO
o
C
= 250 V
Application
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
1
2
TO-3
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2ST5949 2ST5949 TO-3 tray
November 2008 Rev 4 1/8
www.st.com
8
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Absolute maximum ratings 2ST5949
1 Absolute maximum ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
V
V
V
P
CBO
CEO
EBO
I
CM
T
T
Collector-base voltage (IE = 0) 250 V
Collector-emitter voltage (IB = 0) 250 V
Emitter-base voltage (IC = 0) 6 V
I
Collector current 17 A
C
Collector peak current (tP < 5 ms) 34 A
Total dissipation at Tc = 25°C 250 W
TOT
Storage temperature -65 to 150 °C
stg
Max. operating junction temperature 150 °C
J
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case _____ __max 0.7 °C/W
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2ST5949 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
I
EBO
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
BE
h
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Collector cut-off current
= 0)
(I
E
Emitter cut-off current
= 0)
(I
C
Collector-emitter
(1)
breakdown voltage (I
= 0)
B
Collector-base breakdown
voltage (I
Emitter-base breakdown
(1)
voltage (I
Collector-emitter
(1)
= 0)
E
= 0)
C
saturation voltage
(1)
Base-emitter voltage IC = 7 A V
DC current gain
FE
f
Transition frequency IC = 1 A V
T
V
V
I
I
I
I
I
I
= 250 V 5 µA
CB
= 6 V 5 µA
EB
= 50 mA 250 V
C
= 100 µA 250 V
C
= 1 mA 6 V
E
= 8 A IB = 800 mA 3 V
C
= 5 V 1.5 V
CE
= 1 A V
C
= 7 A V
C
= 5 V
CE
= 5 V
CE
= 5 V 25 MHz
CE
80
35
160
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Electrical characteristics 2ST5949
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. Output characteristics Figure 5. DC current gain
Figure 6. Collector-emitter saturation
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voltage
Figure 7. Base-emitter voltage
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2ST5949 Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data 2ST5949
DIM.
mm.
min. typ max.
A11.00 13.10
B0.971.15
C 1.50 1.65
D 8.32 8.92
E19.00 20.00
G 10.70 11.10
N 16.50 17.20
P 25.00 26.00
R 4.00 4.09
U 38.50 39.30
V 30.00 30.30
TO-3 mechanical data
0015923C
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2ST5949 Revision history
4 Revision history
Table 5. Document revision history
Date Revision Changes
05-Dec-2007 1 Initial release
05-May-2008 2 New graphics.
11-Jul-2008 3 Updated Figure 7.
17-Nov-2008 4 Content reworked to improve readability, no technical changes
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2ST5949
y
y
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