Datasheet 2SK3408 Datasheet (EIC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

2SK3408

DESCRIPTION

The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.

FEATURES

• Can be driven by a 4-V power source

• Low on-state resistance

= 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)

RDS(on)1
R

= 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)

DS(on)2

R

= 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)

DS(on)3

• Built-in G-S protection diode against ESD.

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3408 SC-96 Mini Mold (Thin Type)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) V
Drain to Gate Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (TA

GS = 0 V) V

DS = 0 V) V

C = 25°C) I

Note1

C = 25°C) P

= 25°C)

Note2

DSS

DGS

GSS

D(DC)

I

D(pulse)

P
Channel Temperature Tch
Storage Temperature Tstg

T1

T2

43±5V
43±5V

±20 V
±1.0 A
±4.0 A

0.2 W

1.25 W
150 °C

–55 to +150 °C

PACKAGE DRAWING (Unit : mm)

+0.1

0.4

–0.05

+0.1

–0.15

0.65

1.5

2.8 ±0.2

1

0.95

3

0.95

1.9

2.9 ±0.2

2

1

: Gate
2 : Source
3 : Drain

EQUIVALENT CIRCUIT

Gate

Gate
Protection
Diode

Marking: XF

0.9 to 1.1

Drain

Source

0.65

0.16

0 to 0.1

Body
Diode

+0.1
–0.06

Notes 1.

PW ≤ 10 µs, Duty Cycle ≤ 1%
Mounted on FR-4 Board, t ≤ 5 sec.

2.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D15016EJ3V0DS00 (3rd edition)
Date Published April 2001 NS CP(K)
Printed in Japan

The mark ★ shows major revised points.

©

2000

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3408

Zero Gate Voltage Drain Current I
Gate Leakage Current I
Gate Cut-off Voltage V

DSS

VDS = 30.4 V, VGS = 0 V10

GSS

VGS = ±16 V, VDS = 0 V ±10

GS(off)VDS

= 10 V, ID = 1 mA 1.5 2.0 2.5 V

A

µ

A

µ

Forward Transfer Admittance | yfs |VDS = 10 V, ID = 0.5 A12.0S
Drain to Source On-state Resi stance R

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DS(on)1VGS

DS(on)2VGS

R

DS(on)3VGS

R

iss

oss

rss

d(on)

r

d(off)

f

G

GS

GD

F(S-D)IF

rr

rr

= 10 V, ID = 0.5 A 155 195 mΩ
= 4.5 V, ID = 0.5 A 185 250 mΩ

= 4.0 V, ID = 0.5 A 195 260 mΩ
VDS = 10 V 230 pF
VGS = 0 V50pF
f = 1 MHz 30 pF
VDD = 20 V18ns
ID = 0.5 A14ns

GS(on)

V

= 10 V 115 ns

RG = 10

Ω 38 ns

DS

V

= 30.4 V4.0nC
ID = 1.0 A1.0nC
VGS = 10 V1.0nC

= 1.0 A, VGS = 0 V0.81V
IF = 1.0 A, VGS = 0 V25ns
di/dt = 100 A /

s16nC

µ

TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE

D.U.T.

V

GS

10%

0

0

10%

td(on)

90%

tr

I

D

ton

V

GS

I

D

td(off)

(on)

t

off

90%

90%

10%

t

f

PG.

D.U.T.

IG = 2 mA

50 Ω

PG.

V

GS

0

τ

τ = 1 s

µ

Duty Cycle ≤ 1%

L

R

GS

V

G

R

Wave Form

V

DD

I

D

Wave Form

R

L

V

DD

2

Data Sheet D15016EJ3V0DS

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

dT - Derating Factor - %

20

0

0

30

60

90

TA - Ambient Temperature -

120

˚C

150

★

10

0.1

- Drain Current - A

D

I

0.01

FORWARD BIAS SAFE OPERATING AREA

V)

10

Limited

=

DS(on)

GS

R

1

Single Pulse
Mounted on 250 mm
Connected to Drain Electrode in
50 mm x 50 mm x 1.6 mm FR-4 Board

(@V

I

D

(DC)

2

x 35 m Copper Pad

µ

0.1

(pulse)

5 s

100

PW

10

ms

ms

10 1001

I

D

VDS - Drain to Source Voltage - V

2SK3408

=

1

ms

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

4

V

GS

=10 V

3

4.5 V

4.0 V

2

- Drain Current - A

D

I

1

0

0

0.2 0.4 0.6 0.8

DS

- Drain to Source Voltage - V

V

GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE

2.5

2

1.5

- Gate Cut-off Voltage - V

GS(off)

V

1

−50
T

ch

- Channel Temperature - ˚C

FORWARD TRANSFER CHARACTERISTICS

10

1

0.1

= 125˚C

A

T

−

75˚C
25˚C
25˚C

0.01

0.001

ID - Drain Current - A

0.0001

1

0.00001
10

2

VDS = 10 V

34

VGS - Gate to Sorce Voltage - V

FORWARD TRANSFER ADMITTANCE Vs.
DRAIN CURRENT

V

DS

I

D

= 1 mA

= 10 V

10

1

TA = −25˚C

25˚C

75˚C

0.1

| - Forward Transfer Admittance - S

fs

| y

0.01

50 1000

150

0.01

0.1

125˚C

1

VDS = 10 V

10

ID - Drain Current - A

Data Sheet D15016EJ3V0DS

3

2SK3408

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

400

VGS = 10 V

300

200

TA = 125˚C

75˚C
25˚C

−

25˚C

100

0

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0.10.01

D

- Drain Current - A

I

1

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

400

VGS = 4.0 V

TA = 125˚C

300

75˚C

200

25˚C

−

25˚C

10

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT

400

VGS = 4.5 V

300

200

TA = 125˚C

75˚C

25˚C

−

25˚C

100

0

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0.10.01

I

D

- Drain Current - A

1

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

400

ID = 0.5 A

GS

= 4.0 V

300

V

200

10

4.5 V
10 V

100

0

- Drain to Source On-state Resistance - mΩ

DS(on)

R

0.10.01

D

- Drain Current - A

I

1

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

500

400

300

200

100

- Drain to Source On-state Resistance - mΩ

0

DS (on)

R

0

5

VGS - Gate to Source Voltage - V

10

15

ID = 1.0 A

10

20

100

- Drain to Source On-state Resistance - mΩ

0

DS (on)

R

−50

0

T

ch

- Channel Temperature -˚C

50 100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

1000

100

10

Ciss, Coss, Crss - Capacitance - pF

1

0.1 1
V

DS

- Drain to Source Voltage - V

10

f = 1

V

GS

= 0V

C

C

MHz

C

oss

rss

iss

100

4

Data Sheet D15016EJ3V0DS

2SK3408

SWITCHING CHARACTERISTICS

1000

100

tf

, tf - Swwitchig Time - ns

10

(off)

, tr, td

V

DD

= 20V

V

GS

1

(on) = 10V

G

= 10Ω

R

(on)

td

0.1
I

D

DYNAMIC INPUT CHARACTERISTICS

12

ID = 1.0 A

10

V

DD

8

6

td

(off)

1

- Drain Current - A

= 32 V

20 V

8 V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

10

1

tr

td

(on)

0.1

- Source to Drain Current - A

F

10

I

0.01

0.4

0.6 0.8

V

F(S-D)

- Diode Forward Voltage - V

Pulsed
VGS = 0 V

1.0

1.2

4

- Gate to Source Voltage - V

GS

V

2

0

0

13542

Qg - Gate Charge - nC

★

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

Single Pulse

Without Board

100

Mounted on 250 mm2 x 35 m
Copper Pad
Connected to Drain Electrode
in 2500 mm

2

x 1.6 mm FR-4 Board

µ

10

- Transient Thermal Resistance - ˚C/W

th(ch-A)

r

1

10.001 0.01 0.1 10 100 1000

PW - Pulse Width - S

Data Sheet D15016EJ3V0DS

5

DYNAMIC CLAMP APPLICATION

Microcomputer

2SK3408

Relay

Load

Rin

RGS

Remarks 1. Input resistance is necessary to Gate terminal.

(Range ; 1kΩ to 10kΩ, Recommend ; 3kΩ)

2. Pull down resistance is necessary between Gate to Source.
(Several 10kΩ)

6

Data Sheet D15016EJ3V0DS

[MEMO]

2SK3408

Data Sheet D15016EJ3V0DS

7

2SK3408

•

The information in this document is current as of April, 2001. The information is subject to change
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books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

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M8E 00. 4