Datasheet 2SK3380 Datasheet (HIT)

Silicon N Channel MOS FET

High Speed Switching

Features

• Low on-resistance

RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA)
RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)

• 4 V gate drive device.

Outline

2SK3380

ADE-208-806 (Z)

1st.Edition.

June 1999

G

SPAK

D

1

2

3

1. Source

2. Drain

3. Gate

S

2SK3380

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I

DSS

GSS

D

D(pulse)

DR

Note1

Channel dissipation Pch 300 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltege drain

GSS

I

DSS

current
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

GS(off)

DS(on)

DS(on)

Forward transfer admittance |yfs| 145 220 — mS I
Input capacitance Ciss — 6 — pF VDS = 10 V
Output capacitance Coss — 18 — pF VGS = 0
Reverse transfer capacitance Crss — 2 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note: 2. Pulse test

See characteristics curves of 2SK3288

30 — — V ID = 100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±5 µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0

1.3 — 2.3 V ID = 10µA, VDS = 5 V
— 1.26 1.44 Ω I
— 2.8 3.44 Ω I

— 200 — ns ID = 150 mA, VGS = 10 V
— 600 — ns RL = 66.6 Ω
— 1100 — ns
— 1100 — ns

30 V
±20 V
300 mA

1.2 A
300 mA

= 150 mA,VGS = 10 V

D

= 50 mA,VGS = 4 V

D

= 150 mA, VDS =10 V

D

Note 2

Note 2

Note 2

2

Main Characteristics

2SK3380

Power vs. Temperature Derating

400

300

200

100

Channel Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta ( °C)

Maximum Safe Operation Area

5
2

1.0

0.5

D

0.2

0.1

0.05

0.02

Operation in this area

0.01

is limited by RDS(on)

0.005

Drain Current I (A)

0.002

0.001

Ta=25

0.0005

0.05

°C

0.1 1.0 10 50

0.2 0.5

Drain to Source Voltage V (V)

10 µs

PW=10ms

DC Operation

5

2

DS

100 µs
1ms

20

3

2SK3380

Package Dimensions

Unit: mm

0.6 Max

0.45 ± 0.1

4.2 Max

1.27 1.27

2.54

0.6

3.2 Max

1.8 Max

14.5 Min

2.2 Max

0.4 ± 0.1

Hitachi Code

EIAJ

JEDEC

SPAK

–
–

4

2SK3380

Cautions

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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