Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6358
2SK3285
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20.9
4.5
Features
· Low ON resistance.
· 4V drive.
Package Dimensions
unit:mm
2093A
[2SK3285]
10.2
0.9
11.5
1.6
0.8
9.4
2.55
123
1.2
11.0 8.8
0.4
2.7
2.55
unit:mm
2169
9.9
4.5
0.8
1.6
123
0.8
2.55
2.55
[2SK3285]
10.2
2.0
1.2
2.55
2.7
2.55
4.5
1.3
8.8
2.5
1.5
0.4
1.3
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FA
30300TS (KOTO) TA-2280 No.6358–1/5
2SK3285
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25˚C
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
SG
R
R
r
f
DS
V
)ffo(VSDI,V01=
1IDV,A01=
)no(SD
2IDV,A4=
)no(SD
)no(d
)ffo(d
I
SD
SG
SD
SD
SD
S
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A01=2181S
D
V01=7132mΩ
SG
V5.4=4243mΩ
SG
zHM1=f,V01=0001Fp
zHM1=f,V01=014Fp
zHM1=f,V01=061Fp
tiucriCtseTdeificepseeS11sn
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS58sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,A02=
SG
D
0=0.12.1V
03V
02±V
04A
08A
56.1W
04W
sgnitaR
nimpytxam
A02=71Cn
A02=0.4Cn
A02=5.3Cn
˚C
˚C
tinU
Switching Time Test Circuit
V
IN
10V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
G
50Ω
VDD=15V
D
S
ID=10A
RL=1.5Ω
V
OUT
No.6358–2/5
2SK3285
I
-- V
D
yfs
F
C
3.0V
4.5V
6.0V
-- V
C
--25°
DS
-- I
25°C
SD
D
GS
GS
VGS=2.5V
Tc=25°C
–V
VDS=10V
VGS=0
IT00379
IT00381
IT00383
IT00385
10
9
8.0V
8
7
–A
D
Drain Current, I
–mΩ
(on)
DS
Static Drain-to-Source
On-State Resistance, R
100
fs|–S
y
Forward Transfer Admittance, |
100
–A
F
Forward Current, I
0.01
0.001
10.0V
6
5
4
3
2
1
0
00.20.1 0.40.3 0.60.5 0.80.7 1.00.9
60
55
50
45
40
35
30
25
20
15
10
5
0
01028144126161820
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1 101.0
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
7
5
3
2
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.21.11.0
Drain-to-Source Voltage, VDS–V
10A
ID=4A
2
3.5V
RDS(on) -- V
Gate-to-Source Voltage, V
Tc=--25°C
75°C
357 2357
Drain Current, ID–A
I
C
°
25°
Tc=75
Diode Forward Voltage, VSD–V
I
-- V
16
14
12
D
GS
–A
10
D
8
6
Drain Current, I
4
Tc=75°C
C
°
--25
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
60
50
–mΩ
40
(on)
DS
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--75 --50 --25 0 25 50 75 100 125 175150
Gate-to-Source Voltage, VGS–V
RDS(on) -- Tc
=4A, V
I
D
=10A, V
I
D
GS
GS
25
=4.5V
=10.0V
°C
Case Temperature, Tc – ˚C
2.0
1.8
1.6
1.4
(off) – V
1.2
GS
1.0
0.8
0.6
0.4
Cutoff Voltage, V
0.2
0
--40 --20 1000 20 40 60 80 120
10000
7
5
3
2
1000
7
5
3
2
100
Ciss, Coss, Crss – pF
7
5
3
2
10
0 5 10 15 20 25 30
VGS(off) -- Tc
Case Temperature, Tc – ˚C
Ciss, Coss, Crss -- V
Drain-to-Source Voltage, VDS–V
DS
Ciss
Coss
Crss
VDS=10V
IT00380
IT00382
VDS=10V
ID=1mA
IT00384
f=1MHz
IT00386
No.6358–3/5
10
VDS=10V
9
ID=10A
V
–
8
GS
7
6
5
4
3
2
Gate-to-Source Voltage, V
1
0
0981110 1312 15142143657 1716
2
IDP=80A
100
7
5
ID=20A
3
2
10
–A
7
5
D
3
,I
2
1.0
7
5
3
2
Drain Current
0.1
7
5
3
2
0.01
0.01 0.1
60
Operation in this
area is limited by RDS(on).
Tc=25°C
Single pulse
23 57
Drain-to-Source Voltage, VDS–V
VGS -- Qg
Total Gate Charge, Qg – nC
A S O
DC operation
23 57
P
23 57 23 57
1.0
-- Tc
D
<10µs
IT00387
100µs
1ms
10ms
100ms
10 100
IT00389
2SK3285
1000
7
5
3
2
100
7
5
3
2
10
7
5
Switching Time, SW Time – ns
3
2
1.0
23 57
0.1 1.0
2.0
1.65
–W
D
1.5
1.0
0.5
SW Time -- I
td(off)
t
f
23 57 23 57
Drain Current, ID–A
P
D
D
t
r
td(on)
10 100
-- Ta
VDD=15V
VGS=10V
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
60
Ambient Temperature, Ta – ˚C
I
-- Tc
D
IT00388
IT00391
50
–W
D
40
30
20
10
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C
IT00390
50
40
–A
D
,I
30
20
Limited by package
Drain Current
10
0
0 20 40 60 80 100 120 140 160
IT01019
No.6358–4/5
2SK3285
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6358–5/5
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