Datasheet 2SK3280 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6436

2SK3280

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· 4V drive.

· Ultrahigh-speed switching.

Package Dimensions

unit:mm

2083B

[2SK3280]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

2.3

1.5

7.0

5.5

1.6

1.2

7.5

0.5

unit:mm

2092B

6.5

5.0

[2SK3280]

1.55.5

2.3

0.5

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

60800TS (KOTO) TA-2615 No.6436–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK3280

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

SSD
SSG

D

PW≤10µs, duty cycle≤1%

PD

D

Tc=25˚C

I

V,Am1=

SSD)RB(

D

V

SSD
SSG

SG

R

SD

R

SD

r

f

DS

V

)ffo(VSDI,V01=

1)no(IDV,A01=

2)no(IDV,A01=

)no(d

)ffo(d

I

SD
SG

SD
SD
SD

S

0=03V

SG

V,V03=

0=1Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A01=2181S

D

V01=5102mΩ

SG

V5.4=2213mΩ

SG

zHM1=f,V01=0001Fp
zHM1=f,V01=014Fp
zHM1=f,V01=061Fp

tiucriCtseTdeificepseeS11sn
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS58sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A02=

SG

D

0=0.12.1V

03V
02±V
02A
54A
1W
03W

sgnitaR

nimpytxam

A02=71Cn
A02=3.3Cn
A02=7.1Cn

˚C
˚C

tinU

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

G

50Ω

D

ID=10A
RL=1.5Ω

S

V

OUT

2SK3280

No.6436–2/4

I

-- V

10

9

8.0V

10.0V

6.0V

4.5V

8

7

–A

D

6

5

4

3

Drain Current, I

2
1
0

0 0.2 0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

D

3.5V

DS

3.0V

VGS=2.5V

Drain-to-Source Voltage, VDS–V

60
55

50
45

–mΩ

40

(on)

35

DS

30

ID=4A

25
20

15
10

5

Static Drain-to-Source

On-State Resistance, R

0

RDS(on) -- V

10A

Gate-to-Source Voltage, V

100

7
5

3

fs|–S

2

y

10

7
5

3
2

1.0
7

5
3

2

Forward Transfer Admittance, |

0.1

10000

1000

100

Ciss, Coss, Crss – pF

7
5

3
2

7
5

3
2

7
5

3
2

10

2

0.1 101.0

Ciss, Coss, Crss -- V

0 5 10 15 20 25

Drain-to-Source Voltage, VDS–V

yfs -- I

Tc= --25

°C

75

357 2357

Drain Current, ID–A

°C

Ciss

Coss

Crss

25

D

°C

GS

GS

–V

DS

IT01822

Tc=25°C

IT01824

VDS=10V

IT01826

f=1MHz

IT01828

2SK3280

30

20

VDS=10V

18

16

14

–A

D

12

10

8

6

Drain Current, I

4
2
0

02.51.5 2.0 4.03.53.00.5 1.0

D

GS

Tc=75°C

--25°C

I

-- V

Gate-to-Source Voltage, VGS–V

60

50

–mΩ

40

(on)

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--50 7525 50 150125100--2 5 00481216202 6 10 14 18

RDS(on) -- Tc

=4A

D

=4.5V, I

V

GS

V

=10.0V, I

GS

D

=10A

Case Temperature, Tc – ˚C

I

-- V

F

100

7
5

3
2

10

7
5

3

–A

2

F

1.0
7
5
3
2

0.1
7
5

3
2

Forward Current, I

0.01
7
5
3
2

0.001

0.2 0.4 0.6 0.8 1.0 1.20.3 0.5 0.7 0.9 1.1

°C

Tc=75

25°C

--25

SD

°C

Diode Forward Voltage, VSD–V

V

-- Qg

10

9

V

8

–

GS

7

6

5
4

3

2

Gate-to-Source Voltage, V

1
0

VDS=10V
ID=20A

0

4 5 6 7 8 9 10 11 12 13 14 15 16123 17

Total Gate Charge, Qg – nC

GS

°C

25

IT01823

IT01825

VGS=0

IT01827

IT01829

No.6436–3/4

2SK3280

1000

100

10

Switching Time, SW Time – ns

1.0

1.5

–W

D

1.0

0.5

SW Time -- I

VDD=15V

7
5

VGS=10V

3
2

7
5

3
2

7
5

3
2

23 57 2 23357

0.1

td(off)

t

f

t

r

1.0 10

Drain Current, ID–A

P

D

td(on)

-- Ta

D

IT01830

100

7

I

=45A

DP

5
3
2

I

=20A

D

10

7
5

–A

3

D

2

,I

1.0
7
5

Operation in this

3

area is limited by RDS(on).

2

Drain Current

0.1
7
5

3

Tc=25°C

2

Single pulse

0.01
23 57 2 2 2333555777

0.01

40

35

–W

D

30

25

20

15

10

0.1 1.0 10 100

Drain-to-Source Voltage, VDS–V

A S O

P

D

DC operation

-- Tc

<10

10ms

µs

1ms

100µs

IT01831

5

Allowable Power Dissipation, P

0020 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT01832

Allowable Power Dissipation, P

0

Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

IT01833

This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.

PS No.6436–4/4