Datasheet 2SK3233 Datasheet (HIT)

Features

2SK3233

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-1369 (Z)

1st. Edition

Mar. 2001

• Low on-resistance: R

• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)

• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)

• Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)

• Avalanche ratings

= 1.1 Ω typ.

DS(on)

Outline

TO–220CFM

D

G

S

1

2

3

1. Gate

2. Drain

3. Source

2SK3233

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current ID
Body-drain diode reverse drain

DSS

GSS

D

Note1

(pulse)

I

DR

current
Body-drain diode reverse drain peak

IDR

(pulse)

Note1

current
Avalanche current IAP
Channel dissipation Pch

Note3

Note2

Channel to case Tehrmal Impedance θ ch-c 4.17 °C/W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Tch ≤ 150°C

500 V
±30 V
5A
20 A
5A

20 A

5A
30 W

2

2SK3233

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance
Forward transfer admittance |yfs| 3.0 4.5 — S ID = 2.5 A, VDS = 10 V
Input capacitance Ciss — 580 — pF VDS = 25 V
Output capacitance Coss — 70 — pF VGS = 0
Reverse transfer capacitance Crss — 13 — pF f = 1 MHz
Turn-on delay time td(on) — 20 — ns ID = 2.5 A
Rise time tr — 15 — ns VGS = 10 V
Turn-off delay time td(off) — 65 — ns RL = 100 Ω
Fall time tf — 15 — ns Rg = 10 Ω
Total gate charge Qg — 15 — nC VDD = 400 V
Gate to source charge Qgs — 3 — nC VGS = 10 V
Gate to drain charge Qgd — 8 — nC ID = 5 A
Body-drain diode forward

V

DF

voltage
Body-drain diode reverse

trr — 400 — ns IF = 5 A, VGS = 0

recovery time
Body-drain diode reverse

Qrr — 1.5 — µC diF/dt = 100 A/µs

recovery charge
Note: 4. Pulse test

500 — — V ID = 10 mA, VGS = 0

—— ±0.1 µAV
—— 1 µAV

= ±30 V, VDS = 0

GS

= 500 V, VGS = 0

DS

3.0 — 4.0 V VDS = 10 V, ID = 1 mA
— 1.1 1.5 Ω ID = 2.5 A, VGS = 10 V

— 0.85 1.3 V IF = 5 A, VGS = 0

Note4

Note4

3

2SK3233

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10

Pulse Test

6 V

8 V

8

10 V

5.5 V

100

Maximum Safe Operation Area

30
10

(A)

D

3
1

0.3

Operation in

Drain Current I

0.1

this area is
limited by R

0.03
Ta = 25°C

0.01

1310

Drain to Source Voltage V

Typical Transfer Characteristics

10

V = 10 V

DS

Pulse Test

8

30

1 ms

°C)

100

PW = 10 ms (1shot)

DC Operation (Tc = 25

DS(on)

100 µs

300

DS

10 µs

1000

(V)

(A)

D

6

4

Drain Current I

2

0

4

V = 4V

GS

10 20 30 40 50

Drain to Source Voltage V

DS

5 V

4.5 V

(V)

(A)

D

6

4

Drain Current I

2

0

Tc = 75°C

246810

Gate to Source Voltage V

25°C
–25°C

GS

(V)

2SK3233

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

20

Pulse Test

(V)

16

DS(on)

12

8

4

Drain to Source Saturation Voltage

V

0

24

I = 5 A

D

6

2 A
1 A

810

Gate to Source Voltage VGS (V)

Static Drain to Source on State Resistance

vs. Temperature

5

Pulse Test

(Ω)

V = 10 V

4

GS

DS(on)

3

I = 5 A

D

2

2 A

1

R

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

1 A

Case Temperature Tc (°C)

Static Drain to Source on State Resistance

vs. Drain Current

5

Pulse Test

(Ω)

V = 10 V, 15 V

GS

2

DS(on)

1

0.5

0.2

Drain to Source on State Resistance

R

0.1
210

0.1 0.5

0.2

1

5

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

50

20
10

Tc = –25°C

5

2

1

25°C

75°C

0.5

DS

0.2

Forward Transfer Admittance |yfs| (S)

0.1

0.2 1 2 10 20

0.1

0.5 5

Drain Current I

V = 10 V
Pulse Test

(A)

D

5020

50

5

2SK3233

Body-Drain Diode Reverse

Recovery Time

1000

500

200

100

50

20

Reverse Recovery Time trr (ns)

10

0.3 1 3 10 30 100

0.1

di / dt = 100 A / µs
V = 0, Ta = 25°C

GS

Reverse Drain Current IDR (A)

Typical Capacitance vs.

Drain to Source Voltage

5000

2000
1000

500

200
100

50

Ciss

Coss

Capacitance C (pF)

20
10

5

Crss

0 50 100 150 200 250

Drain to Source Voltage VDS (V)

V = 0

GS

f = 1 MHz

1000

I = 5 A

D

(V)

800

DS

V = 100 V

DD

600

Dynamic Input Characteristics

V

DS

400

200

Drain to Source Voltage V

0

V = 400 V

DD

250 V
100 V

10 20 30 40 50

Gate Charge Qg (nC)

Switching Characteristics

V = 10 V, V = 250 V

GS

DD

PW = 10 µs, duty < 1 %
R =10 Ω

G

t

d(off)

t

f

t

d(on)

t

r

0.3 1 3 10 30 100
Drain Current I

(A)

D

(V)

GS

1000

500

200

20

V

GS

250 V
400 V

16

12

100

8

50

Switching Time t (ns)

4

Gate to Source Voltage V

0

20

10

0.1

6

2SK3233

Reverse Drain Current vs.

Source to Drain Voltage

10

(A)

8

DR

5, 10 V

6

4

2

Reverse Drain Current I

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V

V = 0 V

GS

Pulse Test

SD

(V)

Gate to Source Cutoff Voltage

vs. Case Temperature

5

V = 10 V

DS

(V)

4

I = 10mA

GS(off)

D

3

2

1

Gate to Source Cutoff Voltage

V

0

-50 0 50 100 150 200
Case Temperature Tc (°C)

1mA

0.1mA

Switching Time Test Circuit Waveform

Vin Monitor

Vout
Monitor

D.U.T.

R

Vin
10 V

10Ω

L

V

DD

= 250 V

Vin

Vout

10%

10%

90%

td(on)

tr

90%

td(off)

90%

10%

t

f

7

2SK3233

3

1

D = 1

s (t)

γ

0.03

0.01

Normalized Transient Thermal Impedance

0.003

0.3

0.1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 4.17°C/W, Tc = 25°C

P

DM

PW

T

D =

PW

T

0.001
10 µ

100 µ 1 m 10 m 100 m 1 10

Pulse Width PW (s)

8

Package Dimensions

2SK3233

As of January, 2001

Unit: mm

1.0 ± 0.2

1.15 ± 0.2

0.6 ± 0.1

10.0 ± 0.3

2.542.54

φ

3.2 ± 0.2

12.0 ± 0.3

2.5 ± 0.2

4.1 ± 0.3

4.5 ± 0.3

2.7 ± 0.2

15.0 ± 0.3

13.60 ± 1.0

0.7 ± 0.1

Hitachi Code
JEDEC
EIAJ

(reference value)

Mass

TO-220CFM
—
—

1.9 g

9

2SK3233

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10

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