Datasheet 2SK3228 Datasheet (HIT)

2SK3228

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

R

=6mΩ typ.

DS(on)

• Low drive current

• 4V gate drive device can be driven from 5V source

Outline

ADE-208-765A(Z)

Target specification

2nd. Edition

December 1998

TO–220AB

G

D

3

1. Gate

2. Drain(Flange)

3. Source

1

2

S

2SK3228

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current IAP*
Avalanche energy EAR*
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

3

3

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50Ω

80 V
±20 V
75 A
300 A
75 A
50 A
181 mJ
100 W

2

2SK3228

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R

(BR)DSS

GSS

DSS

GS(off)

DS(on)

80——V I
——±0.1 µAVGS = ±20V, VDS = 0
——10µAVDS = 80 V, VGS = 0

1.0 — 2.5 V ID = 1mA, VDS = 10V*

— 6.0 7.5 mΩ ID = 40A, VGS = 10V*
resistance — 8.0 12 mΩ ID = 40A, VGS = 4V*
Forward transfer admittance |yfs|5590—S ID = 40A, VDS = 10V*
Input capacitance Ciss — 9700 — pF VDS = 10V
Output capacitance Coss — 1250 — pF VGS = 0
Reverse transfer capacitance Crss — 290 — pF f = 1MHz
Total gate charge Qg — 150 — nc VDD = 25V
Gate to source charge Qgs — 30 — nc VGS = 25V
Gate to drain charge Qgd — 30 — nc ID = 75A
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

t

d(on)

r

d(off)

f

DF

rr

— 80 — ns VGS = 10V, ID = 40A

— 300 — ns RL = 0.75Ω

— 770 — ns

— 370 — ns

— 1.05 — V IF = 75A, VGS = 0

— 90 — ns IF = 75A, VGS = 0
recovery time

Note: 1. Pulse test

= 10mA, VGS = 0

D

diF/ dt =50A/µs

1

1

1

1

3

2SK3228

Package Dimensions

Unit: mm

2.79 ±0.2

1.27

18.5 ±0.57.8 ±0.5

1.2±0.1

2.54 ±0.5

10.16±0.2

9.5

8.0

1.27±0.1

1.5 max

0.76 ±0.1

2.54 ±0.5

f 3.6

+ 0.2

– 0.1

6.4

+ 0.1
– 0.08

15.0 ±0.3

14.0 ±0.5

0.5±0.1

2.7 max

4.44±0.2

1.26±0.15

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

4

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