Datasheet 2SK3224, 2SK3224-Z Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

2SK3224

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.

FEATURES

• Low On-State Resistance

DS(on)1

R

= 40 mΩ MAX. (VGS = 10 V, ID = 10 A)

DS(on)2

R

= 60 mΩ MAX. (VGS = 4.0 V, ID = 10 A)

iss

• Low C

iss

: C

= 790 pF TYP.

• Built-in Gate Protection Diode

• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage V
Gate to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T

Note1

C

= 25°C) P

A

= 25°C) P
Channel Temperature T
Storage Temperature T
Single Avalanche Current
Single Avalanche Energy

Note2

Note2

DSS

GSS(AC)

GSS(DC)

D(DC)

D(pulse)

I

T

T

ch

stg

AS

I

AS

E

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3224

2SK3224-Z

60 V

±20 V

+20, −10 V

±20 A
±70 A

25 W

1.0 W

150 °C

–55 to +150 °C

10 A
10 mJ

TO-251
TO-252

Notes 1.

2.

PW ≤ 10
Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V

µ

s, Duty cycle ≤ 1 %

THERMAL RESISTANCE

Channel to Case R
Channel to Ambient R

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. D13797EJ1V0DS00 (1st edition)
Date Published May 1999 NS CP(K)
Printed in Japan

th(ch-C)

th(ch-A)

5.0 °C/W

125 °C/W

©

1999

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

2SK3224

Drain to Source On-state Resi stance R

Gate to Source Cut-off Voltage V

DS(on)1VGS

DS(on)2VGS

R

GS(off)VDS

= 10 V, ID = 10 A 24 40 m
= 4.0 V, ID = 10 A 33 60 m

= 10 V, ID = 1 mA 1.0 1.5 2.0 V
Forward Transfer Admittance | yfs |VDS = 10 V, ID = 10 A 8.0 15 S
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

DSS

VDS = 60 V, VGS = 0 V 10

GSS

VGS = ±20 V, VDS = 0 V ±10

iss

VDS = 10 V 790 pF

oss

VGS = 0 V 240 pF

rss

f = 1 MHz 100 pF

d(on)ID

d(off)

F(S-D)IF

= 10 A 19 ns

r

GS(on)

V

= 10 V 165 ns

VDD = 30 V 62 ns

f

RG = 10

G

ID = 20 A 20 nC

GS

VDD = 48 V 3 nC

GD

V

Ω

GS(on)

= 10 V 6.5 nC

71 ns

= 20 A, VGS = 0 V 0.93 V

rr

If = 20 A, VGS = 0 V 40 ns

rr

di/dt = 100 A/µs45nC

µ
µ

Ω
Ω

A
A

TEST CIRCUIT 1 AVALANCHE CAPABILITY

VGS = 20 → 0 V

PG.

V

R

G

DD

= 25 Ω

50 Ω

I

D

D.U.T.

I

AS

BV

DSS

V

DS

Starting T

L

DD

V

ch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

I

G

PG.

= 2 mA

50 Ω

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

R

PG.

V

GS

0

τ

τ = 1 µs

Duty Cycle ≤ 1 %

G

R

G

= 10 Ω

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

0

%

90

10 %10

t

d(on)

trt

t

on

V

GS(on)

I

D

d(off)tf

90

%

%

90

%

t

off

R

L

V

DD

2

Data Sheet

D13797EJ1V0DS00

PACKAGE DRAWINGS (Unit : mm)

2SK3224

1) TO-251 (MP-3)

6.5±0.2

5.0±0.2
4

1.6±0.2

213

1.1±0.2

2.32.3

EQUIVALENT CIRCUIT

0.1

+0.2

1.5-

5.5±0.27.0 MAX.

+0.2

0.1

0.5-

0.75

2.3±0.2

13.7 MIN.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.5±0.1

+0.2

0.1

0.5-

2) TO-252 (MP-3Z)

6.5±0.2

5.0±0.2

4.3 MAX.0.8

123

1.1±0.2

2.3 2.3

4

2.0

MAX.

0.1

+0.2

2.3±0.2

1.5-

5.5±0.2

10.0 MAX.

MIN.

0.9

0.8

MAX.

1. Gate

2. Drain

3. Source

4. Fin (Drain)

0.8

0.5±0.1

1.0 MIN.

1.8 TYP.

0.7

Remark

Drain

Body

Gate

Diode

Gate
Protection
Diode

Source

The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Data Sheet

D13797EJ1V0DS00

3

2SK3224

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confirm that this is the latest version.

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M7 98. 8