Datasheet 2SK3212 Datasheet (HIT)

2SK3212

Silicon N Channel MOS FET
High Speed Power Switching

Features

• Low on-resistance

RDS = 0.1 Ω typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

ADE-208-752 (Z)

1st. Edition

February 1999

TO–220FM

G

D

1. Gate

2. Drain

1

2

3

S

3. Source

2SK3212

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch

DSS

GSS

D

D(pulse)

DR

Note3

AP

Note3

AR

Note1

Note2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

100 V
±20 V
10 A
40 A
10 A
10 A
10 mJ
20 W

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R

(BR)DSS

(BR)GSS

GSS

DSS

GS(off)

DS(on)

DS(on)

100 — — V ID = 10 mA, VGS = 0
±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 100 V, VGS = 0

1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 100 130 mΩ ID = 5 A, VGS = 10 V

— 130 180 mΩ ID = 5 A, VGS = 4 V
Forward transfer admittance |yfs| 4.5 7.5 — S ID = 5 A, VDS = 10 V
Input capacitance Ciss — 420 — pF VDS = 10 V
Output capacitance Coss — 185 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse

recovery time

t

d(on)

r

d(off)

f

DF

rr

— 12 — ns ID = 5 A, VGS = 10 V

— 60 — ns RL = 10 Ω

— 105 — ns

—70—ns

— 0.9 — V IF = 10 A, VGS = 0

— 90 — ns IF = 10 A, VGS = 0

diF/ dt = 50 A/ µs

Note: 4. Pulse test

Note4

Note4

Note4

2

Main Characteristics

2SK3212

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

10

10 V

8

6 V

D

6

4 V

Pulse Test

3.5 V

100

Maximum Safe Operation Area

50
20

D

10

5

PW =10 ms (1shot)

DC Operation (Tc = 25°C)

2

1

Drain Current I (A)

Operation in

0.5

this area is
limited by R

0.2
Ta = 25 °C

0.1

12 5

DS(on)

Drain to Source Voltage V (V)

Typical Transfer Characteristics

10

V = 10 V

DS

Pulse Test

8

D

6

1 ms

10 20

10 µs

100 µs

50

DS

100

200

4

Drain Current I (A)

2

0

246810

Drain to Source Voltage V (V)

3 V

V =2.5 V

GS

DS

4

Drain Current I (A)

2

0

Tc = 75°C

12345

Gate to Source Voltage V (V)

–25°C

25°C

GS

3

2SK3212

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

2.5

)

2.0

DS(on

V (V)

1.5

Pulse Test

1.0

I = 5 A

0.5

Drain to Source Saturation Voltage

0

48

Gate to Source Voltage V (V)

D

2 A

12

16 20

GS

Static Drain to Source on State Resistance

vs. Temperature

500

Pulse Test

mΩ

400

DS(on)

R ( )

300

5 A

V = 4 V

200

100

GS

10 V

1, 2 A

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature T

c

(°C)

1 A

1, 2 A

5 A

Static Drain to Source on State Resistance

vs. Drain Current

500

Pulse Test

200

DS(on)

R ( )mΩ

100

V = 4 V

GS

50

20

Drain to Source On State Resistance

10

0.1 1 100.2 5
Drain Current I (A)

20.5

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

Tc = –25 °C

10

5

75 °C

2

1

Forward Transfer Admittance |y | (S)

0.5

V = 10 V

DS

Pulse Test

0.1 0.3 1 3 10 30 100
Drain Current I (A)

D

10 V

5020

25 °C

4

2SK3212

Body–Drain Diode Reverse

Recovery Time

1000

di / dt = 50 A / µs

500

V = 0, Ta = 25 °C

GS

200
100

50

20

Reverse Recovery Time trr (ns)

10

0.1 0.3 1 3 10 30 100
Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

200

I = 5 A

D

V = 100 V

160

DS

DD

50 V
25 V

120

V

GS

80

40

Drain to Source Voltage V (V)

0

V = 100 V

DD

50 V
25 V

V

DS

8 16243240

Gate Charge Qg (nc)

Typical Capacitance vs.
Drain to Source Voltage

5000

2000

1000

500
200

100

Capacitance C (pF)

50

V = 0

GS

20

f = 1 MHz

10

01020304050

Drain to Source Voltage V (V)

Switching Characteristics

20

500
300

16

12

8

4

GS

100

t

30

10

Switching Time t (ns)

3

t

f

Gate to Source Voltage V (V)

0

1

0.1 0.3
Drain Current I (A)

Ciss

Coss

Crss

DS

d(off)

t

r

t

d(on)

V = 10 V, V = 30 V

GS

DD

PW = 5 µs, duty < 1 %

3

1

10 30100

D

5

2SK3212

Reverse Drain Current vs.

Source to Drain Voltage

10

8

DR

6

10 V

4

2

5 V

Reverse Drain Current I (A)

0

0.4 0.8 1.2 1.6 2.0

V = 0, –5 V

GS

Pulse Test

Source to Drain Voltage V (V)

SD

Maximun Avalanche Energy vs.

Channel Temperature Derating

10

I = 10 A

AP

V = 50 V

AR

8

DD

duty < 0.1 %
Rg > 50

6

4

2

0

Repetive Avalanche Energy E (mJ)

25 50 75 100 125 150

Channel Temperature Tch (°C)

Avalanche WaveformAvalanche Test Circuit

Ω

Vin
15 V

V

DS

Monitor

Rg

50Ω

L

I

AP

Monitor

D. U. T

V

1

E = • L • I •

AR

2

I

AP

V

DD

I

D

V

DD

0

AP

2

DSS

V – V

DSS DD

V

DS

V

(BR)DSS

6

2SK3212

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

0.5

0.3

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01
10 µ

0.02

0.01

1shot pulse

100 µ 1 m 10 m

Pulse Width PW (S)

Switching Time Test Circuit Waveform

Tc = 25°C

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 6.25 °C/W, Tc = 25°C

P

DM

PW

T

D =

100 m 1 10

PW

T

Vin Monitor

Vin
10 V

50Ω

D.U.T.

R

L

V

DD

= 30 V

Vout
Monitor

Vin

Vout

td(on)

10%

10%

90%

tr

90%

td(off)

90%

10%

t

f

7

2SK3212

Package Dimensions

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

0.7 ± 0.1

2.54 ± 0.5

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

12.0 ± 0.3

2.0 ± 0.3

5.0 ± 0.3

2.54 ± 0.5

4.45 ± 0.3

2.7

0.6

2.8 ± 0.2

2.5 ± 0.2

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1
Hitachi Code

EIAJ

JEDEC

TO–220FM

SC–67

—

8

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