Page 1
SHINDENGEN
HVX-2 Series Power MOSFET
2SK2676
( F10W90HVX2 )
900V 10A
FEATURES
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
APPLICATION
N-Channel Enhancement type
OUTLINE DIMENSIONS
Case : MTO-3P
(Unit : mm)
●Switching power supply of AC 240V input
●High voltage power supply
●Inverter
RATINGS
●Absolute Maximum Ratings （Tc = 25℃）
Item Symbol Conditions Ratings Unit
Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current（DC）
Continuous Drain Current（Peak)
Continuous Source Current（DC）
Total Power Dissipation
Repetitive Avalanche Current
Single Avalanche Energy
Repetitive Avalanche Energy
Mounting Torque
T
T
V
DSS
V
GSS
I
I
DP
I
P
I
AR
E
E
TOR
stg
ch
D
Pulse width≦10μs, Duty cycle≦1/100
S
T
T
= 150℃
ch
T
AS
AR
= 25℃
ch
T
= 25℃
ch
（ Recommended torque ：0.5 N･m ）
-55～150 ℃
150
900 V
±30
10
20 A
10
120 W
10A
260 mJ
26
0.8 N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Page 2
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item Symbol Conditions Min. Typ. Max. Unit
V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
(BR)DSSID
I
DSS
I
GSS
g
fs
R
DS(ON)ID
V
THID
V
SDIS
θjc
Q
g
C
iss
C
rss
C
oss
t
on
t
off
2SK2676 ( F10W90HVX2 )
= 1mA, VGS = 0V
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 5A, VDS = 10V
=5A, VGS = 10V
= 1mA, VDS = 10V
= 5A, VGS = 0V
junction to case
VDD = 400V, VGS = 10V, ID = 10A
VDS = 25V, VGS = 0V, f = 1MH
ID = 5A, RL = 30Ω, VGS = 10V
Z
900 V
250 μA
±0.1
4.8 8.0 S
1.05 1.4 Ω
2.5 3.0 3.5 V
1.5
1.04 ℃/Ｗ
90 nC
2150
50 pF
210
140 250 ns
440 740
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Page 3
2SK2676 Transfer Characteristics
20
Tc = −55°C
15
[A]
D
10
Drain Current I
5
25°C
100°C
150°C
VDS = 25V
TYP
0
0 5 10 15 20
Gate-Source Voltage VGS [V]
Page 4
2SK2676
100
[Ω]
DS(ON)
10
1
Static Drain-Source On-state Resistance
ID = 5.0A
0.1
Static Drain-Source On-state Resistance R
0.01
-50 0 50 100 150
Case Temperature Tc [°C]
VGS = 10V
pulse test
TYP
Page 5
[V]
TH
2SK2676
6
5
4
3
2
Gate Threshold Voltage
Gate Threshold Voltage V
1
0
-50 0 50 100 150
Case Temperature Tc [°C]
VDS = 10V
ID = 1mA
TYP
Page 6
100
10
[A]
D
2SK2676
Safe Operating Area
100µs
200µs
1
R
DS(ON)
limit
Drain Current I
0.1
Tc = 25°C
Single Pulse
0.01
1 10 100 1000
Drain-Source Voltage VDS [V]
1ms
10ms
DC
Page 7
1
10
0
10
-1
10
Transient Thermal Impedance
2SK2676
10
1
0.1
Time t [s]
-2
10
-3
10
-4
10
0.01
Transient Thermal Impedance θjc(t) [°C/W]
Page 8
2SK2676
100
80
60
40
20
Single Avalanche Energy Derating
Single Avalanche Energy Derating [%]
0
0 50 100 150
Starting Channel Temperature Tch [°C]
Page 9
10000
0.005
f=1MHz
Ta=25°C
TYP
Ciss
Coss
Crss
Drain-Source Voltage VDS [V]
1000
100
2SK2676
Capacitance
Capacitance Ciss Coss Crss [pF]
10
1
0 20 40 60 80 100
Page 10
= 15V → 0V
= 100V
DD
GS
V
V
Rg = 35Ω
= 260mJE
AS
E
Single Avalanche Current - Inductive Load
= 10A
AS
I
= 26mJ
AR
2SK2676
10
AS
[A]
Inductance L [mH]
0.1 1 10 100
1
Single Avalanche Current I
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2SK2676 Power Derating
100
80
60
40
Power Derating [%]
20
0
0 50 100 150
Case Temperature Tc [°C]
Page 12
2SK2676
Gate Charge Characteristics
500
V
DS
400
[V]
DS
300
200
Drain-Source Voltage V
100
VDD = 400V
200V
100V
V
GS
ID = 10A
TYP
20
15
[V]
GS
10
5
Gate-Source Voltage V
0
0 50 100 150
Gate Charge Qg [nC]
0
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