Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD907
DESCRIPTION
·High Collector Current
·Good Linearity of h
·High Reliability
·Wide Area of Safe Operation
APPLICATIONS
·Audio amplifier
·Series regulators
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base voltage 7 V
Collector Current-Continuous 10 A
B Base Current-Continuous 1.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
80 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.56
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD907
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V
Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA
DC Current Gain IC= 2A; VCE= 5V 40
Turn-on Time 1.0
Storage Time 2.0
= 5A; IB1= -IB2= 0.5A
I
C
RL= 5Ω; PW=20μs;
Duty Cycle≤2%
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
2
1.0
μs
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