Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD898
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage ,high power dissipation
·Wide area of safe operation
APPLICATIONS
·For TV horizontal deflection output
applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
T
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 1500 V
Emitter-base voltage Open collector 6 V
Collector current 3 A
Collector current-peak 3.5 A
Total power dissipation TC=25℃ 50 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD898
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CEsat
V
BEsat
I
CES
I
EBO
h
V
FE
Emitter-base breakdown voltage IE=200mA; IC=0; 6 V
Collector-emitter saturation voltage IC=2.5A;IB=0.8 A 5.0 V
Base-emitter saturation voltage IC=2.5A;IB=0.8 A 1.5 V
Collector cut-off current VCE=1500V;RBE=0 0.5 mA
Emitter cut-off current VEB=6V;IC=0 50 200 mA
DC current gain IC=0.5A ; VCE=5V 10 40
F
Diode forward voltage IF=3A 2.2 V
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD898
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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