Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD897
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·Low Collector Saturation Voltage-
: V
CE(sat)
·Built-in Damper Diode
APPLICATIONS
·Designed for use in color TV deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
= 5.0V(Max.)@ IC= 1A
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 1.5 A
Collector Current- Peak 5.0 A
B Base Current- Continuous 0.8 A
Collector Power Dissipation
= 25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -65~150
50 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 2.5
isc Website：www.iscsemi.cn
℃/W
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD897
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
EBO
V
CE
(sat)
V
BE
(sat)
I
CES
h
FE
V
ECF
f
T
t
f
Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6.0 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 5.0 V
Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V
Collector Cutoff Current VCE= 1500V; RBE= 0 500 μA
DC Current Gain IC= 0.5A; VCE= 5V 8
C-E Diode Forward Voltage IF= 2A 2.5 V
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz
Fall Time
I
= 0.8A, I
C
B1(
= 0.16A
end)
1.0 μs
isc Website：www.iscsemi.cn
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