Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD884
DESCRIPTION ·
·With TO-220C package
·High voltage;high speed
·Large P
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN DESCRIPTION
C
1
2
3 Emitter
Base
Collector;connected to
mounting base
ABSOLUTE MAXIMUM RATNIGS(T
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
I
P
CBO
CEO
EBO
I
C
CP
CP
T
Collector-base voltage Open emitter 330 V
Collector-emitter voltage Open base 200 V
Emitter-base voltage Open collector 6 V
Collector current 7 A
Collector current-Peak
Collector current-Peak nonrepetitive 15 A
Total power dissipation
=25℃)
C
T
=25℃
C
10 A
40 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD884
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
V
BE
I
CES
I
EBO
h
(sat)
(sat)
FE
t
f
Collector-emitter sustaining voltage IC=100mA ; IB=0 200 V
Collector-emitter saturation voltage IC=5A ;IB=0.5A B 1.0 V
Base-emitter saturation voltage IC=5A ;IB=0.5A B 1.2 V
VCE=330V; VEB=0 0.1
Collector cut-off current
VCE=300V; VEB=0,Ta=100℃
mA
1.0
Emitter cut-off current VEB=6.0V; IC=0 1.0 mA
DC current gain IC=5A ; VCE=4V 10 45
=5A ;-VEB=5V
I
Fall time
C
IB1 =0.8A;RB=0.5Ω
0.75
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD884
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
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