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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD835
DESCRIPTION
·High DC Current Gain-
: h
= 400(Min) @IC= 4A
FE
·Low Collector Saturation Voltage-
: V
CE(sat)
APPLICATIONS
·Electronic ignitor
·Relay& solenoid drivers
·Motor controls
·Switching regulators
ABSOLUTE MAXIMUM RATINGS(T
= 1.5V(Max.) @ IC= 4A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO(SUS)
V
CEO
V
EBO
I
I
P
T
T
C
B
C
J
stg
Collector-Base Voltage 400 V
Collector-Emitter Voltage 350 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 15 V
Collector Current-Continuous 6 A
B Base Current-Continuous 0.3 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -45~150 ℃
40 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 3.0 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD835
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE
Collector-Emitter Sustaining Voltage IC= 1A; I
Collector-Emitter Breakdown Voltage IC= 0.1mA; I
Collector-Base Breakdown Voltage IC= 0.1mA; I
Emitter-Base Breakdown Voltage IE= 100mA; I
Collector-Emitter Saturation Voltage IC= 4A; IB= 10mA B 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 4A; IB= 10mA B 2.0 V
)
sat
Collector Cutoff Current VCB= 400V; IE=0 0.1 mA
Emitter Cutoff Current VEB= 15V; IC=0 100 mA
DC Current Gain IC= 4A; VCE= 1.5V 400
Switching Times
= 0 B 350 V
B
= 0 B 400 V
B
= 0 400 V
E
= 0 15 V
C
t
on
t
stg
Turn-on Time 1.0
I
= 4A, IB1 =-IB2 = 40mA,
C
= 10Ω;
Storage Time 12.0
R
L
μs
μs
Pw = 20μs, DutyCycle≤2%
t
f
Fall Time
6.0
μs
isc Website：www.iscsemi.cn
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