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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD792
DESCRIPTION ·
·With TO-3 package
·High voltage
·Wide area of safe operation
APPLICATIONS
·For line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
T
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 4 V
Collector current 5 A
Collector current-peak 7 A
Total power dissipation TC=90℃ 35 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD792
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
t
stg
Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V
Emitter-base breakdown votage IE=10mA; IC=0 4 V
Collector-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V
Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V
μA
Collector cut-off current
VCB=750V;IE=0 50
=1500V;IE=0
V
CB
1.0 mA
Emitter cut-off current VEB=4V; IC=0 0.1 mA
FE
t
f
DC current gain IC=4A ; VCE=10V 4 12
Fall time 0.7
I
Storage time
=4A; I
C
=1.8A; LB=10μH
B
end
13
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD792
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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