Page 1
Application
• Low frequency power amplifier
• Complementary pair with 2SB740
Outline
TO-92MOD
2SD789
Silicon NPN Epitaxial
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SD789
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Emitter cutoff current I
CBO
EBO
DC current transfer ratio hFE*
Collector to emitter saturation
V
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 20 — pF V
Note: 1. The 2SD789 is grouped by hFE as follows.
BCDE
100 to 200 160 to 320 250 to 500 400 to 800
100 — — V IC = 10 µA, IE = 0
50 — — V IC = 1 mA, RBE = ∞
6——VI
——1 µAV
— — 0.2 µAVEB = 6 V, IC = 0
1
100 — 800 V
— — 0.3 V IC = 1 A, IB = 0.1 A
— 100 — MHz V
100 V
50 V
6V
1A
0.9 W
= 10 µA, IC = 0
E
= 80 V, IE = 0
CB
= 2 V, IC = 0.1A
CE
= 2 V, IC = 10 mA
CE
= 10 V, IE = 0, f = 1MHz
CB
2
Page 3
2SD789
Maximum Collector Dissipation Curve
1.2
(W)
C
0.8
0.4
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
40
1.6
(A)
C
1.2
0.8
Collector Current I
0.4
0
0.4 1.60.8 2.01.2
Collector to Emitter Voltage V
35
30
25
20
IB = 0
15
10
5 mA
P
= 0.9 W
C
CE
(V)
Typical Output Characteristics
100
0.35
0.3
80
(mA)
C
60
40
0.25
0.2
0.15
0.1
20
Collector Current I
0.05 mA
IB = 0
15010050
0
Collector to Emitter Voltage V
841062
CE
(V)
Typical Transfer Characteristics
1,000
300
(mA)
100
C
VCE = 2 V
30
10
Collector Current I
3
1
0 1.00.2 0.80.4 0.6
Base to Emitter Voltage V
BE
(V)
3
Page 4
2SD789
10,000
FE
3,000
1,000
DC Current Transfer Ratio vs.
Collector Current
Pulse
V
= 2 V
CE
(V)
CE(sat)
Saturation Voltage vs. Collector Current
1.0
(V)
V
BE(sat)
BE(sat)
0.3
300
100
30
DC Current Transfer Ratio h
10
10 100 1,00030 30031
Collector Current I
Collector to Emitter Saturation Voltage V
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
300
(pF)
100
ob
30
10
f = 1 MHz
3
I
= 0
E
1.0
Collector Output Capacitance C
0.3
Collector to Base Voltage V
0.1
V
0.03
0.04
Base to Emitter Saturation Voltage V
Collector Current I
CE(sat)
C
300303 100101.00.3
(V)
CB
Pulse
I
= 10 I
C
(mA)
B
1,00030030 10010
4
Page 5
Unit: mm
0.65 ± 0.1
0.75 Max
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
0.7
8.0 ± 0.5
2.3 Max
10.1 Min
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 Mod
—
Conforms
0.35 g
Page 6
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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products.
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