Page 1
2SD787, 2SD788
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB738 and 2SB739
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SD787, 2SD788
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD787 2SD788 Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SD787 2SD788
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SD787 and 2SD788 are grouped by hFE as follows.
BCDE
100 to 200 160 to 320 250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
T
20 — — 20 — — V IC = 10 µA, IE = 0
16 — — 20 — — V IC = 1 mA, RBE = ∞
6——6 ——VIE = 10 µA, IC = 0
——2 — —2 µAVCB = 16 V, IE = 0
— — 0.2 — — 0.2 µAVEB = 6 V, IC = 0
1
100 — 800 100 — 800 VCE = 2 V, IC = 0.1 A
— — 0.3 — — 0.3 V IC = 1 A, IB = 0.1 A
— 100 — — 100 — MHz VCE = 2 V,
Cob — 20 — — 20 — pF VCB = 10 V, IE = 0,
20 20 V
16 20 V
66V
22A
0.9 0.9 W
I
= 10 mA
C
f = 1 MHz
2
Page 3
2SD787, 2SD788
Maximum Collector Dissipation Curve
1.2
(W)
C
0.8
0.4
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Output Characteristics
2.0
1.6
(A)
C
1.2
0.8
Collector Current I
0.4
0
0.4 1.60.8 2.01.2
Collector to Emitter Voltage V
20
IB = 0
15
10
P
C
5 mA
= 0.9 W
(V)
CE
Typical Output Characteristics
100
0.3
80
(mA)
C
60
0.25
0.2
0.15
40
20
Collector Current I
0.1
0.05 mA
IB = 0
CE
841062
(V)
15010050
0
Collector to Emitter Voltage V
Typical Transfer Characteristics
1,000
300
(mA)
100
C
30
10
Collector Current I
3
VCE = 2 V
Ta = 75°C
25
–25
1
0 1.00.2 0.80.4 0.6
Base to Emitter Voltage V
BE
(V)
3
Page 4
2SD787, 2SD788
DC Current Transfer Ratio vs.
10,000
FE
3,000
1,000
300
Pulse
V
CE
Collector Current
= 2 V
Ta = 75°C
25
(V)
CE(sat)
(V)
BE(sat)
Saturation Voltage vs. Collector Current
3.0
V
1.0
BE(sat)
0.3
IC = 10 I
0.1
B
100
30
DC Current Transfer Ratio h
10
10 100 1,00030 30031
Collector Current I
–25
Collector to Emitter Saturation Voltage V
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
(pF)
ob
300
f = 1 MHz
I
100
30
Collector Output Capacitance C
10
Collector to Base Voltage V
0.03
V
CE(sat)
0.01
0.003
Base to Emitter Saturation Voltage V
Collector Current IC (mA)
= 0
E
101.0 30.30.1
(V)
CB
3,0001,00030 300100103
4
Page 5
Unit: mm
0.65 ± 0.1
0.75 Max
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
0.7
8.0 ± 0.5
2.3 Max
10.1 Min
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 Mod
—
Conforms
0.35 g
Page 6
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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