Datasheet 2SD768 Specification

2SD768(K)

Silicon NPN Epitaxial

Application

Medium speed and power switching complementary pair with 2SB727(K)

Outline

TO-220AB

2

1

1. Base

2. Collector

1

2

3

(Flange)

3. Emitter

3 kΩ

(Typ)

200 Ω

(Typ)

3

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation PC*

CBO

CEO

EBO

C

C(peak)

1

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

120 V
120 V
7V
6A
10 A
40 W

2SD768(K)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown
voltage

Emitter to base breakdown
voltage

Collector cutoff current I

DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
Turn on time t
Turn off time t

Note: 1. Pulse test.

V

(BR)CEO

V

(BR)EBO

CBO

I

CEO

FE

CE(sat)1

CE(sat)2

BE(sat)1

BE(sat)2

on

off

120 — — V IC = 25 mA, RBE = ∞

7——VI

= 50 mA, IC = 0

E

— — 100 µAVCB = 120 V, IE = 0
——10µAVCE = 100 V, RBE=∞
1000 — 20000 VCE = 3 V, IC = 3 A*
— — 1.5 V IC = 3 A, IB = 6 mA*
——3VI
——2VI

= 6A, IB = 60 mA*

C

= 3 A, IB = 6 mA*

C

— — 3.5 V IC = 6 A, IB = 60 mA*
— 1.0 — µsI
— 3.0 — µsI

= 3 A, IB1 = –IB2 = 6 mA

C

= 3 A, IB1 = –IB2 = 6 mA

C

1

1

1

1

1

Maximum Collector Dissipation

Curve

60

(W)

C

40

20

Collector power dissipation P

0 50 100 150

Case temperature T

(°C)

C

Area of Safe Operation

30

(A)

C

10

3

i

C(peak)

I

C(max)

DC Operation(T

1 µs

100 µs

PW = 10 ms

1 ms

1.0

0.3
Ta = 25°C

0.1

1 shot pulse

Collector current I

C

= 25°C)

0.03
1 3 30 30010 100 1,000

Collector to emitter voltage V

CE

(V)

2

Typical Output Characteristics

10

TC = 25°C

8

(A)

C

6

4

Collector current I

2

012

Collector to emitter voltage V

1.2

1.0

0.8

0.6

0.4

0.2 mA

IB = 0

CE

(V)

2SD768(K)

DC Current Transfer Ratio

10,000

FE

3,000

1,000

300

DC current transfer ratio h

100

543

0.1 0.3 3 101.0

vs. Collector Current

Ta = 75°C

25°C

–25°C

VCE = 3 V
Pulse

Collector current IC (A)

Saturation Voltage

vs. Collector Current

10

(V)

(V)

CE(sat)

BE(sat)

1.0

TC = 25°C

3

V

BE(sat)

V

CE(sat)

I

C

/I

B

/I

I

B

C

= 500

0.3

Base to emitter sauration voltage V

0.1

Collector to emitter saturation voltage V

0.1 0.3
Collector current I

31.0 10

(A)

C

= 200

500

200

Switching time t (µs)

10

1.0

0.3

0.1

0.03

0.01

Switching Time vs. Collector Current

3

VCC = 30V
I

= 500 IB1 = –500 I

C

Ta = 25°C

0.30.1 1.0
Collector current I

t

stg

t

on

t

f

B2

310

(A)

C

3

2SD768(K)

Transient Thermal Resistance

1 to 1,000 s

1 to 1,000 ms

TC = 25°C

1 10 100 1,000 (s)
1 10 100 1,000 (ms)

Time t

(°C/W)

j-c

1.0

0.3

0.1

0.03

Thermal resistance θ

0.01

10

3

4

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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