Page 1
2SD755, 2SD756, 2SD756A
Silicon NPN Epitaxial
Application
• Low frequency high voltage amplifier
• Complementary pair with 2SB715, 2SB716 and 2SB716A
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SD755, 2SD756, 2SD756A
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SD755 2SD756 2SD756A Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SD755 2SD756 2SD756A
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter
breakdown voltage
Collector to base
breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by h
DEF
2SD755 250 to 500 400 to 800 600 to 1200
2SD756 250 to 500 400 to 800 —
2SD756A 250 to 500 — —
V
V
CBO
h
V
T
100 — — 120 — — 140 — — V IC = 1 mA,
(BR)CEO
100 — — 120 — — 140 — — V IC = 10 µA, IE = 0
(BR)CBO
— — 0.5 — — 0.5 — — 0.5 µAVCB = 100 V, IE = 0
*1250 — 1200 250 — 800 250 — 500 VCE = 12 V,
FE1
125 — — 125 — — 125 — — VCE = 12 V,
FE2
— — 0.75 — 0.75 — — 0.75 V VCE = 12 V,
BE
— — 0.2 — — 0.2 — — 0.2 V IC = 10 mA,
CE(sat)
— 350 — — 350 — — 350 — MHz VCE = 12 V,
Cob — 1.6 — — 1.6 — — 1.6 — pF VCB = 25 V, IE = 0,
100 120 140 V
100 120 140 V
555V
50 50 50 mA
750 750 750 mW
RBE = ∞
IC = 2 mA
IC = 10 mA
IC = 2 mA
IB = 1 mA
IC = 5 mA
f = 1 MHz
as follows.
FE1
2
Page 3
2SD755, 2SD756, 2SD756A
Maximum Collector Dissipation Curve
750
500
250
Collector Power Dissipation Pc (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
10
VCE = 12 V
3
(mA)
1.0
C
Ta = 100°C75
50 25 –250
0.3
0.1
1,200
FE
1,000
10
(mA)
C
Collector Current I
800
600
400
Typical Output Characteristics
10 µA
8
8
6
6
4
4
2
2
IB = 0
0 1020304050
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
VCE = 12 V
Ta = 100°C
75
50
25
0
–25
Collector Current I
0.03
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8
Base to Emitter Voltage VBE (V)
200
DC Current Transfer Ratio h
0
0.01 0.03 0.1 0.3 1.0 3 10 30
Collector Current I
(mA)
C
3
Page 4
2SD755, 2SD756, 2SD756A
1,000
(MHz)
T
300
100
30
10
Gain Bandwidth Product f
0.01 0.03 0.1 0.3 1.0 3 10 30
Collector Output Capacitance vs.
50
(pF)
ob
20
10
5
Collector to Base Voltage
f = 1 MHz
= 0
I
E
Gain Bandwidth Product vs.
Collector Current
VCE = 12 V
Collector Current I
(mA)
C
100
50
(mA)
C
20
10
Area of Safe Operation
IC
(DC Operation)
(max)
Pc = 750 mW
Ta = 25°C
(50 V, 15 mA)
2
1.0
Collector Output Capacitance C
0.5
1 3 10 30 100
Collector to Base Voltage VCB (V)
5
(100 V, 6 mA)
(120 V, 5 mA)
Collector Current I
2
(140 V, 4 mA)
2SD755
1
5 10 20 50 100 200 500
Collector to Emitter Voltage VCE (V)
2SD756
2SD756A
4
Page 5
Unit: mm
0.65 ± 0.1
0.75 Max
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
0.7
8.0 ± 0.5
2.3 Max
10.1 Min
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 Mod
—
Conforms
0.35 g
Page 6
Cautions
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quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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