Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD748 2SD748A
DESCRIPTION
·With TO-3 package
·High V
CBO
·High power dissipation
APPLICATIONS
·Low frequency power amplifier regulator
for TV power supply applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current 1 A
B
P
C
Collector-base voltage Open emitter 250 V
2SD748 200
Collector-emitter voltage
2SD748A
Emitter-base voltage Open collector 5 V
Collector current 3 A
Collector power dissipation
Open base
T
=25℃
C
V
250
80 W
T
j
T
stg
Junction temperature 150
Storage temperature -45~150
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD748 2SD748A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
I
CBO
I
EBO
h
BE
FE
Collector-emitter
breakdown voltage
2SD748A
I
=10mA ;RBE=∞
C
V
250
Emitter-base breakdown voltage IE=5mA ;IC=0 5 V
Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V
Base-emitter on voltage IC=1A ; VCE=5V 1.5 V
Collector cut-off current VCB=200V; IE=0 1.0 mA
Emitter cut-off current VEB=5V; IC=0 1.0 mA
DC current gain IC=1A ; VCE=5V 25 200
2SD748 200
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD748 2SD748A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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