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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlingtion Power Transistor 2SD692
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
h
= 1000 (Min) @ IC =1 Adc
FE
·Collector-Emitter Breakdown VoltageV
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL PARAMETER VALUE UNIT
(BR)CEO
= 80V(Min)
V
V
V
V
P
T
CBO
CER
CEO
EBO
I
C
I
B
T
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 6 V
Collector Current -Continuous 6 A
B Base Current -Continuous 3 A
Collector Power Dissipation@TC=25℃
C
Junction Temperature 150 ℃
j
Storage Temperature -65~150 ℃
50 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlingtion Power Transistor 2SD692
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
(BR)CEO
V
V
CE
I
CBO
I
EBO
h
CER
(sat)
FE
Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA B 1.7 V
Collector Cutoff current VCB= 100V; IE=0 10
Emitter Cut-off current VEB= 6V; IC= 0 10 mA
DC Current Gain IC= 1A ; VCE= 4V 1000 10000
h
Classifications
FE
Q P O
1000-2500 2000-5000 4000-10000
I
= 50mA ; RBE= 1 kΩ
C
100 V
μA
isc Website：www.iscsemi.cn
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