
isc
Collector-Emitter Voltage
Collector Current-Continuous
ICMCollector Current-Peak
Collector Power Dissipation
@TC=25℃
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 160V(Min)
·High Power Dissipation-
: PC= 100W(Max)@TC=25℃
·Complement to Type 2SB655
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
2SD675
isc website:www.iscsemi.com isc & iscsemi is registered trademark

isc
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
2SD675
h
NOTICE
Classifications
FE-1
:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc website:www.iscsemi.com isc & iscsemi is registered trademark