Datasheet 2SD667A, 2SD667 Datasheet (HIT)

2SD667, 2SD667A

Silicon NPN Epitaxial

Application

• Low frequency power amplifier

• Complementary pair with 2SB647/A

Outline

TO-92MOD

1. Emitter

2. Collector

3. Base

3

2

1

2SD667, 2SD667A

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SD667 2SD667A Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P

CBO

CEO

EBO

C

C(peak)

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –50 to +150 °C

Electrical Characteristics (Ta = 25°C)

2SD667 2SD667A

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I
DC current transfer ratio h

Collector to emitter
saturation voltage

Base to emitter voltage V

Gain bandwidth product f

Collector output
capacitance

Notes: 1. The 2SD667 and 2SD667A are grouped by h

2. Pulse test

BCD

2SD667 60 to 120 100 to 200 160 to 320
2SD667A 60 to 120 100 to 200

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

FE1

h

FE2

V

CE(sat)

BE

T

120 — — 120 — — V IC = 10 µA, IE = 0

80 — — 100 — — V IC = 1 mA, RBE = ∞

5——5 ——VIE = 10 µA, IC = 0

— — 10 — — 10 µAVCB = 100 V, IE = 0

1

*

60 — 320 60 — 200 VCE = 5 V,

30 — — 30 — — VCE = 5 V,

——1——1VIC = 500 mA,

— — 1.5 — — 1.5 V VCE = 5 V,

— 140 — — 140 — MHz VCE = 5 V,

Cob — 12 — — 12 — pF VCB = 10 V, IE = 0,

120 120 V
80 100 V
55V
11A
22A

0.9 0.9 W

I

= 150 mA*

C

I

= 500 mA*

C

I

= 50 mA*

B

I

= 150 mA*

C

I

= 150 mA*

C

2

2

2

2

2

f = 1 MHz

as follows.

FE1

2

2SD667, 2SD667A

Maximum Collector Dissipation Curve

1.2

(W)

C

0.8

0.4

Collector Power Dissipation P

0

50 100 150

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

500

VCE = 5 V

200
100

(mA)

C

50

20

Ta = 75°C

10

5

Collector Current I

2
1

0 0.2 0.6 1.00.4 0.8

Base to Emitter Voltage V

25

–25

BE

(V)

1.0
35

30

Typical Output Characteristics

0.8

(A)

C

0.6

25

20

15

10

5

0.4

Collector Current I

0.2

P

C

= 0.9 W

2

1

0.5mA
I

B

02 6 1048

Collector to Emitter Voltage V

CE

(V)

DC Current Transfer Ratio

vs. Collector Current

300

VCE = 5 V

FE

250

200

150

Ta = 75°C

25

–25

100

50

DC Current Transfer Ratio h

0

1 10 100 1,0003 30 300

Collector Current I

(mA)

C

= 0

3

2SD667, 2SD667A

0.6

(V)

CE(sat)

0.5

1.2

(V)

1.0

BE(sat)

Saturation Voltage

vs. Collector Current

IC = 10 I

B

Pulse

0.4

0.3

0.2

0.1

Collector to Emitter Saturation Voltage V

0.8

0.6

0.4

0.2

0

0

Base to Emitter Saturation Voltage V

Gain Bandwidth Product

vs. Collector Current

240

VCE = 5 V

200

(MHz)

T

160

120

80

40

Gain Bandwidth Product f

0

10 30 100 300 1,000

Collector Current IC (mA)

V

BE(sat)

Ta = –25°C

25

75

75

V

CE(sat)

25

Ta = –25°C

1 10 100 1,0003 30 300

Collector Current IC (mA)

Collector Output Capacitance vs.

200

ob

100

f = 1 MHz

= 0

I

E

(pF)

50

20

10

5

Collector Output Capacitance C

2

1 5 20 10021050

Collector to Base Voltage V

Collector to Base Voltage

CB

(V)

4

Unit: mm

0.65 ± 0.1

0.75 Max

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

0.7

8.0 ± 0.5

2.3 Max

10.1 Min

3.8 ± 0.3

0.5

1.27

2.54

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 Mod
—
Conforms

0.35 g

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