Page 1
Silicon NPN Epitaxial
Application
Low frequency power amplifier, Muting
Outline
TO-92 (1)
2SD655
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SD655
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
Base to emitter voltage V
Collector to emitter saturation
V
CBO
BE
CE(sat)
voltage
DC current transfer ratio hFE*
Gain bandwidth product f
T
Notes: 1. The 2SD655 is grouped by hFE as follows.
2. Pulse test
DEF
250 to 500 400 to 800 600 to 1200
30 — — V IC = 10 µA, IE = 0
15 — — V IC = 1 mA, RBE = ∞
5——VI
— — 1.0 µAV
— — 1.0 V V
— 0.15 0.5 V IC = 500 mA, IB = 50 mA*
1
250 — 1200 V
— 250 — MHz V
30 V
15 V
5V
0.7 A
1.0 A
500 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 1 V, IC = 150 mA
CE
= 1 V, IC = 150 mA*
CE
= 1 V, IC = 150 mA
CE
2
2
2
Page 3
2SD655
Maximum Collector Dissipation Curve
600
400
200
Collector Power Dissipation Pc (mW)
0 50 100 150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
1,000
300
(mA)
C
100
VCE = 1 V
Typical Output Characteristics
50
40
(mA)
C
30
20
10
Collector Current I
0
Collector to Emitter Voltage V
10,000
FE
3,000
1,000
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005 mA
IB = 0
CE
DC Current Transfer Ratio vs.
Collector Current
VCE = 1 V
Pulse
108642
(V)
30
10
Collector Current I
3
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
300
100
30
DC Current Transfer Ratio h
10
1 3 10 30 100 300 1,000
Collector Current I
(mA)
C
3
Page 4
2SD655
Collector to Emitter Saturation Voltage vs.
Collector Current
3.0
IC = 10 I
1.0
B
0.3
(V)
0.1
(sat)
CE
V
0.03
0.01
Collector to Emitter Saturation Voltage
0.003
3 10 30 100 300 1,000 3,000
Collector Current I
50
(pF)
ob
20
3,000
1,000
(MHz)
T
Gain Bandwidth Product f
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
VCE = 1 V
300
100
30
10
3
0.3 1.0 3 10 30 100 300
Collector Current I
(mA)
C
f = 1 MHz
= 0
I
E
10
5
2
Collector Output Capacitance C
1
12 51020 50
Collector to Base Voltage VCB (V)
4
Page 5
Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Page 6
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Loading...