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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD649
DESCRIPTION
·High Breakdown Voltage-
: V
= 1500V (Min)
CBO
·High Reliability
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CES
V
EBO
IC Collector Current- Continuous 3 A
ICP Collector Current-Pulse 5 A
PC
TJ Junction Temperature 130 ℃
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Emitter-Base Voltage 5 V
Collector Power Dissipation
≤90℃
@ T
C
35 W
T
stg
Storage Temperature Range -65~130 ℃
isc website：www.iscsemi.cn
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Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD649
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
h
FE
tf
t
stg
Collector-Emitter Saturation Voltage I
Base-Emitter Saturation Voltage I
Collector Cutoff Current
DC Current Gain IC= 3A; VCE= 10V 4 12
Fall Time
Storage Time 13
= 3A; IB= 1A 7.0 V
C
= 3A; IB= 1A 1.5 V
C
V
= 750V ; IE= 0
CB
100 μA
VCB= 1500V ; IE= 0 1 mA
1 μs
= 3A, I
I
C
= 1A, LB= 20μH
B
end
μs
isc website：www.iscsemi.cn
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