Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD546
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·Converters
·Inverters
·Switching regulators
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter 800 V
Collector-emitter voltage Open base 500 V
Emitter-base voltage Open collector 6 V
Collector current 1 A
T
Collector power dissipation
Junction temperature 150
=25℃
C
30 W
℃
T
stg
Storage temperature -55~150
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD546
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
Collector-emitter sustaining voltage IC=30mA ;IB=0 500 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=500mA; IB=100mA B 1.0 V
Base-emitter saturation voltage IC=500mA; IB=100mA B 1.5 V
Collector cut-off current VCB=800V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=20mA ; VCE=10V 40 200
T
Transition frequency IC=0.1A ; VCE=10V 7 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD546
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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