Page 1
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD478
DESCRIPTION
·With TO-220C package
·Complement to type 2SB568
APPLICATIONS
·Low frequency high voltage power
amplifier
PINNING
PIN DESCRIPTION
TV vertical deflection output
1 Base
2
3 Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 200 V
CBO
V
Collector-emitter voltage Open base 150 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
I
C
ICM Collector current-peak
P
C
Collector current 2 A
Ta=25 1.8
Collector power dissipation
TC=25 30
5 A
W
T
j
T
stg
Junction temperature 150
Storage temperature -45~150
Page 2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD478
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
Collector-emitter breakdown voltage IC=50mA; RBE=: 150 V
Emitter-base breakdown votage IE=5mA; IC=0 6 V
Collector-emitter saturation voltage IC=0.5 A;IB=50m A 3.0 V
VBE Base-emitter voltage IC=50mA ; VCE=4V 1.0 V
I
Collector cut-off current VCB=120V; IE=0 1.0 µA
CBO
I
Emitter cut-off current VEB=4V; IC=0 1.0 µA
EBO
h
DC current gain IC=50mA ; VCE=4V 60 320
FE-1
h
DC current gain IC=0.5A ; VCE=10V 60
FE-2
h
classifications
FE-1
B C D
60-120 100-200 160-320
2
Page 3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD478
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Loading...