Datasheet 2SD476A-K, 2SD476-K Datasheet (HIT)

Page 1
2SD476(K), 2SD476A(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB566(K) and 2SB566A(K)
Outline
1. Base
2. Collector (Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD476(K) 2SD476A(K) Unit
Collector to base voltage V
CBO
70 70 V
Collector to emitter voltage V
CEO
50 60 V
Emitter to base voltage V
EBO
55V
Collector current I
C
44A
Collector peak current I
C(peak)
88A
Collector power dissipation PC*
1
40 40 W Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C
Page 2
2SD476(K), 2SD476A(K)
2
Electrical Characteristics (Ta = 25°C)
2SD476(K) 2SD476A(K)
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown voltage
V
(BR)CBO
70 70 V IC = 10 µA, IE = 0
Collector to emitter breakdown voltage
V
(BR)CEO
50 60 V IC = 50 mA, RBE =
Emitter to base breakdown voltage
V
(BR)EBO
5——5——VI
E
= 10 µA, IC = 0
Collector cutoff current I
CBO
——1 ——1 µAVCB = 50 V, IE = 0
DC current transfer ratio h
FE1
60 200 60 200 VCE = 4 V, IC = 1 A
(Pulse test)
h
FE2
35 35 VCE = 4 V, IC = 0.1 A
Collector to emitter saturation voltage
V
CE(sat)
1.0 1.0 V IC = 2 A, IB = 0.2 A
Base to emitter saturation voltage
V
BE(sat)
1.2 1.2 V
Gain bandwidth product f
T
7 7 MHz VCE = 4 V, IC = 0.5 A
Turn on time t
on
0.3 0.3 µsVCC = 10.5 V
Turn off time t
off
3.0 3.0 µsIC = 10 IB1 = –10 IB2 =
Storage time t
stg
2.5 2.5 µs 0.5 A
Note: 1. The 2SD476(K) and 2SD476A(K) are grouped by h
FE1
as follows.
BC
60 to 120 100 to 200
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation Pc (W)
20
60
40
Maximum Collector Dissipation Curve
0.1
0.2
0.5
1.0
2
5
10
(10 V, 4 A)
(20 V, 2 A)
(50 V, 0.22 A)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
1 2 5 10 20 50 100
Area of Safe Operation
DC
Operation
IC
max
TC = 25°C
P
C
= 40 W
2SD476K
2SD476A (60 V, 0.15 A)
K
Page 3
2SD476(K), 2SD476A(K)
3
Collector to emitter voltage VCE (V)
Collector current I
C
(A)
0 246810
Typical Output Characteristics
1
2
3
4
5
TC = 25
°C
IB = 0
10 mA
20
50
60
70
80
90
30
40
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2
5
Base to emitter voltage V
BE
(V)
0 0.2 0.4
0.6 0.8 1.0 1.2 1.4
Collector current I
C
(A)
Typical Transfer Characteristics
VCE = 4 V
T
C
= 75
°C
25°C
–25°C
5
10
20
50
200
500
1,000
100
Collector current I
C
(A)
DC current transfer ratio h
FE
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5
DC Current Transfer Ratio
vs. Collector Current
VCE = 4 V
TC = 75°C
–25
25
5
0.2
0.4
0.6
1.0
1.2
1.4
0.8
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE
(sat)
(V)
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5
Collector to Emitter Saturation Voltage
vs. Collector Current
lC = 10 l
B
TC = 75°C
–25
25
Page 4
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
-0.08
Hitachi Code JEDEC EIAJ Weight
(reference value)
TO-220AB Conforms Conforms
1.8 g
Unit: mm
Page 5
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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