Page 1
2SD476(K), 2SD476A(K)
Silicon NPN Triple Diffused
Application
Power switching complementary pair with 2SB566(K) and 2SB566A(K)
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD476(K) 2SD476A(K) Unit
Collector to base voltage V
CBO
70 70 V
Collector to emitter voltage V
CEO
50 60 V
Emitter to base voltage V
EBO
55V
Collector current I
C
44A
Collector peak current I
C(peak)
88A
Collector power dissipation PC*
1
40 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C
Page 2
2SD476(K), 2SD476A(K)
2
Electrical Characteristics (Ta = 25°C)
2SD476(K) 2SD476A(K)
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
70 — — 70 — — V IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
50 — — 60 — — V IC = 50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5——5——VI
E
= 10 µA, IC = 0
Collector cutoff current I
CBO
——1 ——1 µAVCB = 50 V, IE = 0
DC current transfer ratio h
FE1
60 — 200 60 — 200 VCE = 4 V, IC = 1 A
(Pulse test)
h
FE2
35 — — 35 — — VCE = 4 V, IC = 0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
— — 1.0 — — 1.0 V IC = 2 A, IB = 0.2 A
Base to emitter
saturation voltage
V
BE(sat)
— — 1.2 — — 1.2 V
Gain bandwidth product f
T
— 7 — — 7 — MHz VCE = 4 V, IC = 0.5 A
Turn on time t
on
— 0.3 — — 0.3 — µsVCC = 10.5 V
Turn off time t
off
— 3.0 — — 3.0 — µsIC = 10 IB1 = –10 IB2 =
Storage time t
stg
— 2.5 — — 2.5 — µs 0.5 A
Note: 1. The 2SD476(K) and 2SD476A(K) are grouped by h
FE1
as follows.
BC
60 to 120 100 to 200
0 50 100 150
Case temperature T
C
(°C)
Collector power dissipation Pc (W)
20
60
40
Maximum Collector Dissipation Curve
0.1
0.2
0.5
1.0
2
5
10
(10 V, 4 A)
(20 V, 2 A)
(50 V, 0.22 A)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
1 2 5 10 20 50 100
Area of Safe Operation
DC
Operation
IC
max
TC = 25°C
P
C
= 40 W
2SD476K
2SD476A
(60 V, 0.15 A)
K
Page 3
2SD476(K), 2SD476A(K)
3
Collector to emitter voltage VCE (V)
Collector current I
C
(A)
0 246810
Typical Output Characteristics
1
2
3
4
5
TC = 25
°C
IB = 0
10 mA
20
50
60
70
80
90
30
40
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2
5
Base to emitter voltage V
BE
(V)
0 0.2 0.4
0.6 0.8 1.0 1.2 1.4
Collector current I
C
(A)
Typical Transfer Characteristics
VCE = 4 V
T
C
= 75
°C
25°C
–25°C
5
10
20
50
200
500
1,000
100
Collector current I
C
(A)
DC current transfer ratio h
FE
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5
DC Current Transfer Ratio
vs. Collector Current
VCE = 4 V
TC = 75°C
–25
25
5
0.2
0.4
0.6
1.0
1.2
1.4
0.8
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE
(sat)
(V)
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5
Collector to Emitter Saturation Voltage
vs. Collector Current
lC = 10 l
B
TC = 75°C
–25
25
Page 4
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4
+0.2
–0.1
φ 3.6
+0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
Page 5
Cautions
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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