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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD362
DESCRIPTION
·With TO-220C package
·Collector-base voltage: V
·Collector current :I
=5A
C
·Collector dissipation : P
APPLICATIONS
·For B/W TV horizontal deflection
output applications
PINNING
PIN DESCRIPTION
=150V
CBO
=40 (TC=25℃)
C
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj Junction temperature 150
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 70 V
Emitter-base voltage Open collector 8 V
Collector current (DC) 5 A
Collector dissipation
℃)
T
=25℃
C
40 W
℃
T
stg
Storage temperature -55~150
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD362
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
V
I
I
h
h
Collector-base breakdown voltage IC=1mA; IE=0 150 V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage IE=1mA; IC=0 8 V
CEsat
BEsat
CBO
EBO
FE
f
T
FE
Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V
Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V
Collector cut-off current VCB=100V; IE=0 20
Emitter cut-off current VEB=5V; IC=0 20
DC current gain IC=5A ; VCE=5V 20 140
Transition frequency IC=0.5A ; VCE=5V 10 MHz
classifications
I
=2mA; RBE=∞
C
70 V
μA
μA
N R O
20-50 40-80 70-140
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD362
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD362
4
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