Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD315
DESCRIPTION
·With TO-66 package
·Complement to type 2SB509
APPLICATIONS
·For use in audio frequency power
amplifier application
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 5 V
Collector current 4 A
Collector current-peak 10 A
Collector power dissipation TC=25℃ 35 W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -40~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD315
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
h
Collector-emitter breakdown voltage IC=10mA ;IB=0 60 V
Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V
Base-emitter on voltage IC=1A ; VCE=2V 1.5 V
Collector cut-off current VCB=20V; IE=0 0.1 mA
Emitter cut-off current VEB=4V; IC=0 1.0 mA
DC current gain IC=1A ; VCE=2V 40 320
DC current gain IC=0.1A ; VCE=2V 40
Transition frequency IC=0.5A ; VCE=5V 8 MHz
Classifications
FE-1
C D E F
40-80 60-120 100-200 160-320
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD315
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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