Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD2500
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for Color TV horizontal deflection output
applications
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
I
B
C
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 10 A
Collector Current- Pulse 20 A
B Base Current- Continuous 5 A
Collector Power Dissipation
=25℃
@ T
C
50 W
T
J
T
stg
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD2500
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE -1
h
FE -2
f
T
C
OB
Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 3.0 V
Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.4 V
Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA
DC Current Gain IC= 1A ; VCE= 5V 10 30
DC Current Gain IC= 6A ; VCE= 5V 4 8
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1.7 MHz
Output Capacitance
Switching times
I
= 0 ; VCB= 10V;f
E
= 1.0MHz
test
135 pF
t
stg
t
f
Storage Time 11 μs
Fall Time
= 6A , I
I
CP
f
= 15.75kHz
H
B1(
= 1.5A,
)
end
0.7 μs
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD2500
isc Website：www.iscsemi.cn
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