Page 1
2SD2337
Silicon NPN Triple Diffused
Application
Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB1530
Outline
TO-220FM
1. Base
2. Collector
1
2
3
3. Emitter
Page 2
2SD2337
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P
CBO
CEO
EBO
C
C(peak)
C
PC*
1
Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
h
V
CBO
FE1
FE2
CE(sat)
voltage
Base to emitter voltage V
BE
Notes: 1. The 2SD2337 is grouped by h
2. Pulse test.
BCD
60 to 120 100 to 200 160 to 320
150 — — V IC = 50 mA, RBE = ∞
6——VI
——1 µAVCB = 120 V, IE = 0
1
*
60 — 320 VCE = 4 V, IC = 50 mA
60 — — VCE = 10 V, IC = 500 mA*
— — 3.0 V IC = 500 mA, IB = 50 mA*
— — 1.0 V VCE = 4 V, IC = 50 mA
as follows.
FE1
200 V
150 V
6V
2A
5A
1.5 W
20
= 5 mA, IC = 0
E
2
2
2
Page 3
Maximum Collector Dissipation Curve
30
20
T
C
(A)
C
10
5
2
1.0
Area of Safe Operation
IC
(max)
(Continuous)
DC Operation (T
(15, 2 A)
2SD2337
10
1.5 W
Collector power dissipation Pc (W)
0
Ta
50
Ambient temperature Ta (°C)
Case temperature T
Typical Output Characteristics
1.0
0.8
(A)
C
0.6
TC = 25°C
10
9
8
7
6
5
4
0.4
3
2
Collector current I
0.2
1 mA
IB = 0
0
246810
Collector to emitter voltage VCE (V)
100
(°C)
C
0.5
0.2
Collector current I
0.1
150
0.05
1,000
500
200
(mA)
C
100
50
20
10
5
Collector current I
2
1
0 0.2 0.4 0.6 0.8 1.0
C
(60, 0.4 A)
= 25°C)
(150 V, 65 mA)
2 5 10 20 50 100 200
Collector to emitter voltage VCE (V)
Typical Transfer Characteristics
VCE = 4 V
Pulse
TC = 75°C
Base to emitter voltage V
25
BE
–25
(V)
3
Page 4
2SD2337
DC Current Transfer Ratio
500
VCE = 4 V
Pulse
FE
200
100
50
20
DC current transfer ratio h
10
vs. Collector Current
TC = 75°C
25
–25
(V)
(sat)
CE
Collector to Emitter Saturation Voltage
vs. Collector Current
0.5
lC = 10 l
B
Pulse
0.2
TC = 75°C
0.1
0.05
–25
0.02
0.01
25
5
10 20 50 100 200 500 1,000 2,000
Collector current I
(mA)
C
0.005
10 30 100 300 1,000 2,000
Collector to emitter saturation voltage V
Collector current I
(mA)
C
4
Page 5
10.0 ± 0.3
7.0 ± 0.3
φ
3.2 ± 0.2
0.6
2.8 ± 0.2
2.5 ± 0.2
Unit: mm
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
0.7 ± 0.1
2.54 ± 0.52.54 ± 0.5
12.0 ± 0.3
5.0 ± 0.3
4.45 ± 0.3
2.5
Hitachi Code
JEDEC
EIAJ
Weight
17.0 ± 0.3
14.0 ± 1.0
0.5 ± 0.1
(reference value)
TO-220FM
—
Conforms
1.8 g
Page 6
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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