
INCHANGE Semiconductor
Collector-Emitter Voltage
ICCollector Current-Continuous
ICMCollector Current-Peak
Collector Power Dissipation@TC=25℃
isc
Silicon NPN Power Transistor 2SD226
DESCRIPTION
·Excellent Safe Operating Area
·Low Collector-Emitter Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
isc website:www.iscsemi.com isc & iscsemi is registered trademark

INCHANGE Semiconductor
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Base Cutoff Current
Collector-Emitter Saturation Voltage
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
2SD226
*:Pulse test:Pulse width=300us,duty cycle≤2%
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products,
and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages.
isc website:www.iscsemi.com isc & iscsemi is registered trademark