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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2047
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Speed Switching
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
I
B
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 700 V
Emitter-Base Voltage 10 V
Collector Current- Continuous 5 A
Collector Current-Pulse 10 A
B Base Current- Continuous 3 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
80 W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.55
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD2047
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
h
FE
Switching Times
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 700 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1500 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 2.0 V
Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.5 V
Collector Cutoff Current
DC Current Gain IC= 1A ; VCE= 5V 18 50
VCB= 750V ; IE= 0 50 μA
V
= 1500V ; IE= 0
CB
1.0 mA
t
on
t
stg
t
f
Turn-on Time 1.0 μs
I
Storage Time 3.0 μs
Fall Time
= 2.5A, IB1= 0.25A; IB2= -0.5A
C
0.5 μs
isc Website：www.iscsemi.cn
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