Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD198
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·voltage regulator
·Inverters
·Switching mode power supply
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
T
j
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 6 V
Collector current 1 A
T
Collector power dissipation
Junction temperature 165
=75℃
C
25 W
℃
T
stg
Storage temperature -55~200
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD198
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
f
Collector-emitter sustaining voltage IC=100mA ;IB=0 300 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=1.0A; IB=0.1A 1.0 V
Base-emitter saturation voltage IC=1.0A; IB=0.1A 1.5 V
Collector cut-off current VCB=300V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
FE
T
DC current gain IC=0.1A ; VCE=5V 30 300
Transition frequency IC=0.5A ; VCE=10V 25 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD198
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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