Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD188
DESCRIPTION
·With TO-3 package
·Large current capability
·Wide area of safe operation
APPLICATIONS
·For audio frequency output applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
P
CBO
CEO
EBO
I
C
C
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 100 V
Emitter-base voltage Open collector 6 V
Collector current 7 A
T
Collector power dissipation
=75℃
C
60 W
T
j
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD188
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE
f
T
Collector-emitter breakdown voltage IC=50mA ;IB=0 100 V
Collector-base breakdown voltage IC=1mA ;IE=0 100 V
Emitter-base breakdown voltage IE=1mA ;IC=0 6 V
Collector-emitter saturation voltage IC=5A ; IB=0.5A 2.0 V
Base-emitter saturation voltage IC=5A ; IB=0.5A 2.5 V
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=3A ; VCE=2V 30 120
Transition frequency IC=0.5A ; VCE=10V 10 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD188
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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