Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1850
DESCRIPTION
·High Voltage
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
I
P
CBO
CES
CEO
EBO
I
C
CP
I
B
C
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Collector-Emitter Voltage 700 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 7 A
Collector Current-Peak 20 A
B Base Current- Continuous 3 A
Collector Power Dissipation
@Ta=25℃
Collector Power Dissipation
=25℃
@T
C
3
W
120
T
T
stg
Junction Temperature 150 ℃
j
Storage Temperature Range -55-150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1850
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
(BR)EBO
V
CE(
V
BE(
h
FE-1
h
FE-2
I
CBO
f
T
Switching Times, Resistive Load
t
s
t
f
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 8.0 V
)
sat
Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.5 V
)
sat
DC Current Gain IC= 1A; VCE= 5V 5 25
DC Current Gain IC= 6A; VCE= 5V 4.5
Collector Cutoff Current
Transition Frequency IC= 1A; VCE= 10V 2 MHz
Storage Time 1.5
Fall Time
VCB= 1000V; IE= 0 10
= 1500V; IE= 0
V
CB
= 6A; IB1= 1.5A; IB2= -3A,
I
C
= 200V
V
CC
0.2
1.0 mA
μA
μs
μs
isc Website：www.iscsemi.cn
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