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Transistors
2SD1820A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB1219A
■ Features
• Low collector to emitter saturation voltage V
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
CP
C
C
j
stg
CE(sat)
60 V
50 V
5V
1A
500 mA
150 mW
150 °C
−55 to +150 °C
+0.1
0.3
–0.0
132
(0.65)
(0.65)
1.3
±0.1
2.0
±0.2
10°
1: Base
2: Emitter EIAJ: SC-70
3: Collector S-Mini Type Package
Marking Symbol: X
(0.425)
±0.10
1.25
+0.2
±0.1
0.9
0.9
0 to 0.1
Unit: mm
+0.10
0.15
–0.05
±0.1
2.1
5°
±0.1
0.2
–0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
1
Forward current transfer ratio
*
Collector to emitter saturation voltage
1
Transition frequency
*
1
*
CBO
CBO
CEO
EBO
h
FE1
h
FE2
V
CE(sat)IC
f
Collector output capacitance C
Note)*1: Pulse measurement
2: Rank classification
*
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol XQ XR XS X
Product of no-rank is not classified and have no indication for rank.
VCB = 20 V, IE = 0 0.1 µA
IC = 10 µA, IE = 060V
IC = 2 mA, IB = 050V
IE = 10 µA, IC = 05V
2
*
VCE = 10 V, IC = 150 mA 85 340
VCE = 10 V, IC = 500 mA 40
= 300 mA, IB = 30 mA 0.35 0.6 V
VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF
ob
1
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2SD1820A Transistors
PC T
240
200
(mW)
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C)
V
I
100
(V)
CE(sat)
0.03
0.01
Collector to emitter saturation voltage V
30
10
3
1
0.3
0.1
0.01
CE(sat)
Ta = 75°C
25°C
−25°C
0.1 1 10
0.03 0.3 3
Collector current IC (A)
a
C
IC / IB = 10
IC V
I
= 10 mA
B
9 mA
8 mA
7 mA
6 mA
CE
5 mA
800
700
600
(mA)
C
500
400
300
200
Collector current I
100
0
02048 1612
Collector to emitter voltage VCE (V)
V
I
BE(sat)
25°C
Ta = −25°C
75°C
0.1 0.3 1 3 10
)
V
(
BE(sat)
Base to emitter saturation voltage V
0.03
0.01
100
30
10
3
1
0.3
0.1
0.01 0.03
Collector current IC (A
Ta = 25°C
4 mA
3 mA
C
IC / IB = 10
2 mA
1 mA
)
IC I
800
700
600
(mA)
C
500
400
300
200
Collector current I
100
0
0108642
B
Base current IB (mA)
hFE I
300
250
FE
Ta = 75°C
200
150
100
Forward current transfer ratio h
25°C
−25°C
50
0
0.01
0.1 1 100.03 0.3 3
C
Collector current IC (A
VCE = 10 V
= 25°C
T
a
= 10 V
V
CE
)
fT I
240
200
)
MHz
(
160
T
120
80
Transition frequency f
40
0
−1 −3 −10 −30 −100
−2 −20−5 −50
Emitter current IE (mA
2
E
VCB = 10 V
T
= 25°C
a
Cob V
12
)
pF
10
(
ob
8
6
4
2
Collector output capacitance C
0
3 10 30 100220550
)
1
Collector to base voltage VCB (V
CB
IE = 0
f = 1 MHz
= 25°C
T
a
120
)
V
(
100
CER
80
60
40
20
Collector to emitter voltage V
0
)
V
R
CER
1310 30 100 300 1 000
Base to emitter resistance RBE (kΩ
BE
IC = 2 mA
T
a
= 25°C
)
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