Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1730
DESCRIPTION
·High Voltage
·High Switching Speed
·Built-in damper diode
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
I
P
CBO
CES
CEO
EBO
I
C
CP
I
B
C
T
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Collector-Emitter Voltage 700 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 5 A
Collector Current-Peak 15 A
B Base Current- Continuous 2 A
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
j
100 W
℃
T
stg
Storage Temperature Range -55-150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1730
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
(BR)EBO
V
CE(
V
BE(
h
FE
I
CBO
V
ECF
f
T
Switching Times, Resistive Load
t
s
t
f
Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 8.0 V
)
sat
Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.5 V
)
sat
DC Current Gain IC= 1A; VCE= 5V 5 25
Collector Cutoff Current
C-E Diode Forward Voltage IF= 5A 2.3 V
Transition Frequency IC= 1A; VCE= 10V 2 MHz
Storage Time 1.5
Fall Time
VCB= 750V; IE= 0 10
= 1500V; IE= 0
V
CB
= 4A; IB1= 0.8A; IB2= -1.6A,
I
C
= 200V
V
CC
0.2
1.0 mA
μA
μs
μs
isc Website：www.iscsemi.cn
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