Datasheet 2SD1610, 2SD1609 Datasheet (HIT)

2SD1609, 2SD1610

Silicon NPN Epitaxial

Application

Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110

Outline

TO-126 MOD

1. Emitter

2. Collector

1

2

3

3. Base

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item Symbol 2SD1609 2SD1610 Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C

CBO

CEO

EBO

C

C

160 200 V
160 200 V
55V
100 100 mA

1.25 1.25 W

2SD1609, 2SD1610

Electrical Characteristics (Ta = 25°C)

2SD1609 2SD1610

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I

DC current tarnsfer ratio h

Base to emitter voltage V
Collector to emitter

saturation voltage
Gain bandwidth product f
Collector output

capacitance
Note: 1. The 2SD1609 and 2SD1610 are grouped by h

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

160 — — 200 — — V IC = 10 µA, IE = 0

160 — — 200 — — V IC = 1 mA, RBE = ∞

5——5——VIE = 10 µA, IC = 0

——10———µAVCB = 140 V, IE = 0
—————10 VCB = 160 V, IE = 0

1

*

60 — 320 60 — 320 VCE = 5 V, IC = 10 mA
30 — — 30 — — VCE = 5 V, IC = 1 mA
— — 1.5 — — 1.5 V VCE = 5 V, IC = 10 mA
——2 ——2 V IC = 30 mA, IB = 3 mA

— 140 — — 140 — MHz VCE = 5 V, IC = 10 mA

h

V

FE1

FE2

BE

CE(sat)

T

Cob — 3.8 — — 3.8 — pF VCB = 10 V, IE = 0,

f = 1 MHz

as follows.

FE1

BCD

60 to 120 100 to 200 160 to 320

Maximum Collector Dissipation

1.5

(W)

C

1.0

0.5

Collector power dissipation P

0 50 100 150

Ambient temperature Ta (°C)

Curve

Typical Output Characteristics

20

16

(mA)

C

12

8

4

Collector current I

024

Collector to emitter voltage V

120
110
100

90
80

70
60
50
40
30
20
10 µA
IB = 0

CE

1086

(V)

2

100

50

(mA)

C

20

10

Typical Transfer Characteristics

VCE = 5 V

25

–25

Ta = 75°C

FE

500

200

100

50

2SD1609, 2SD1610

DC Current Transfer Ratio vs.

Collector Current

VCE = 5 V
Pulse

Ta = 75°C

–25

25

5

Collector current I

2

1

0 0.2

Base to emitter voltage V

0.4

0.6 1.00.8

BE

Saturation Voltage vs. Collector Current

5

(V)

(V)

CE(sat)

BE(sat)

Base to emitter saturation voltage V

0.05

Collector to emitter saturation voltage V

IC = 10 I

B

Pulse

2

1.0

V

BE(sat)

0.5

0.2

0.1

V

CE(sat)

Ta = –25°C

12 10

55020 100

Collector current I

Ta = –25°C

75

25

75

25

(mA)

C

(V)

20

DC current transfer ratio h

10

5

1 2 20 10010 50

5

Collector current I

Gain Bandwidth Product vs.

Collector Current

500

VCE = 10 V

200

(MHz)

T

100

50

20

10

Gain bandwidth product f

5

1.00.5 2
Collector current I

(mA)

C

(mA)

C

2010 505

3

2SD1609, 2SD1610

Collector Output Capacitance vs.

50

(pF)

ob

20

10

5

2

1.0

Collector output capacitance C

0.5

Collector to Base Voltage

f = 1 MHz
I

= 0

E

2510

1

Collector to base voltage V

20 10050

(V)

CB

4

Unit: mm

2.3 ± 0.3

0.8

2.29 ± 0.5

8.0 ± 0.5

120°

120°

φ

120°

3.7 ± 0.7

1.1

2.29 ± 0.5

3.1

11.0 ± 0.5

15.6 ± 0.5

+0.15
–0.1

0.55

2.7 ± 0.4

1.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-126 Mod
—
—

0.67 g

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