Datasheet 2SD1527 Datasheet (HIT)

Page 1
Application
High voltage power amplifier
Outline
TO-220AB
2SD1527
Silicon NPN Triple Diffused
1. Base
2. Collector
1
2
3
(Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Rating Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
C
PC*
CBO
CEO
EBO
C
1
1000 V 1000 V 5V
0.5 A
1.8 W 25 W
Page 2
2SD1527
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
voltage Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I DC current transfer ratio h
Base to emitter voltage V Collector to emitter saturation
CBO
h
V
FE1
FE2
BE
CE (sat)
voltage Gain bandwidth product f
T
Collector output capacitance Cob 5 pF VCB = 100 V, IE = 0, f = 1 MHz
1000 V IC = 1 mA, RBE =
5——VI
= 1 mA, IC = 0
E
——10µAVCB = 800 V, IE = 0 10 VCE = 5 V, IC = 10 mA 10 VCE = 5 V, IC = 100 mA — 1.2 V VCE = 5 V, IC = 100 mA ——5VI
= 300 mA, IB = 60 mA
C
5 MHz VCE = 20 V, IC = 50 mA
Maximum Collector Dissipation Curve
30
20
10
Collector power dissipation Pc (W)
0 50 100 150
Case temperature T
(°C)
C
Area of Safe Operation
1.0 (50 V, 0.5 A)
(A)
C
0.1
DC Operation
Collector current I
0.01 30 100 300 1,000 3,000
Collector to emitter voltage VCE (V)
P
C
= 25 W
(600 V, 0.042 A)
(1,000 V, 0.015 A)
TC = 25°C
2
Page 3
Base to Emitter Saturation Voltage
vs. Collector Current
2
(V)
(sat) BE
IC/IB = 10 Ta = 25°C Pulse test
1
0
Base to emitter saturation voltage V
1 2 5 10 20 50 100 200 500
Collector current IC (mA)
DC Current Transfer Ratio
vs. Collector Current
100
2SD1527
TC = 25°C
FE
VCE = 10 V
30
VCE = 5 V
10
3
DC current transfer ratio h
1 2 5 10 20 50 100 200 500
Collector current I
(mA)
C
3
Page 4
2SD1527
Gain Bandwidth Product
vs. Collector Current
50
VCE = 20 V Pulse test
20
(MHz)
T
10
5
2
1.0
Gain bandwidth product f
0.5 1 3 10 30 100
Collector current I
(mA)
C
Collector to Emitter Saturation Voltage
vs. Collector Current
(V)
5
(sat) CE
2
1.0
lC/lB = 10 Ta = 25°C Pulse test
0.5
0.2
0.1
0.05
Collector to emitter saturation voltage V
12 510
20 50 100 200 500
Collector current I
(mA)
C
4
Page 5
Collector Output Capacitance
vs. Collector to Base Voltage
100
(pF)
50
ob
20
10
5
2
Collector output capacitance C
1
2 5 10 20 50 100 200
Collector to base voltage V
f = 1 MHz
= 0
I
E
(V)
CB
2SD1527
5
Page 6
11.5 MAX
Unit: mm
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
1.27
2.54 ± 0.5
10.16 ± 0.2
9.5
8.0
φ 3.6
-0.08
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
+0.2
6.4
–0.1
+0.1
4.44 ± 0.2
1.26 ± 0.15
2.7 MAX
14.0 ± 0.5 15.0 ± 0.3
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight
(reference value)
TO-220AB Conforms Conforms
1.8 g
Page 7
Cautions
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2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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