Datasheet 2SD1521 Datasheet (HIT)

Application

Low frequency power amplifier

Outline

TO-126 MOD

2SD1521

Silicon NPN Epitaxial

2

3

1. Emitter

2. Collector

1

2

3

3. Base
2 kΩ

(Typ)

0.5 kΩ
(Typ)

1

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CEO

EBO

C

C (peak)

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
C to E diode forward current ID*

1

Note: 1. Value at TC = 25°C.

50 V
7V

1.5 A

3.0 A
10 W

1.5 A

I

D

2SD1521

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

V

(BR)CBO

[VZ]

50 60 70 V I

(Zener breakdown voltage)
Emitter to base breakdown

V

(BR)EBO

7——VI

voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation V
voltage V
Base to emitter saturation V
voltage V
C to E diode forward voltage V

CEO

FE

CE (sat)1

CE (sat)2

BE (sat)1

BE (sat)2

D

——10µAVCE = 50 V, RBE = ∞
2000 — 30000 VCE = 3 V, IC = 1 A*
— — 1.5 V IC = 1 A, IB = 1 mA*
— — 2.0 V IC = 1.5 A, IB = 1.5 mA*
— — 2.0 V IC = 1 A, IB = 1 mA*
— — 2.5 V IC = 1.5 A, IB = 1.5 mA*

— — 3.0 V ID = 1.5 A
Turn on time Ton — 0.5 — µsI
Turn off time Toff — 2.0 — µs

Note: 1. Pulse test.

= 0.1 mA, IE = 0

C

= 50 mA, IC = 0

E

= 1 A, IB1 = –IB2 = 1 mA

C

1

1

1

1

1

Maximum Collector Dissipation Curve

15

10

5

Collector power dissipation Pc (W)

0 50 100 150

Case temperature T

(°C)

C

Area of Safe Operation

10

(A)

C

1.0

0.3

iC

(peak)

3

IC

(max)

DC (T

1 µs

PW = 10 ms

1 ms

C

= 25°C)

0.1

Collector current I

0.03
Ta = 25°C

1 shot pulse

0.01

3 10 30 100 300

Collector to emitter voltage V

100 µs

(V)

CE

2

2SD1521

Typical Output Characteristics

5

10

5

4

(A)

C

3

3

0.5

P

1

C

= 20 W

0.3

0.2

2

Collector current I

1

0

246 108

0.1 mA

I

B

= 0

Collector to emitter voltage VCE (V)

Saturation Voltage vs. Collector Current

(V)

10

(V)

(sat)

(sat)

CE

BE

VBE

(sat)

1.0
VCE

(sat)

lC/lB = 500

0.1

Ta = 25°C

0.01

Base to emitter saturation voltage V

Collector to emitter saturation voltage V

0.03 0.1 0.3 1.0 3

Pulse test

Collector current I

TC = 25

(A)

C

°C

200

DC Current Transfer Ratio

vs. Collector Current

30,000

10,000

FE

3,000

1,000

300

100

DC current transfer ratio h

30

0.03 0.1 0.3 1.0 3

= 75°C

C

T

–25

25

Collector current I

Switching Time vs. Collector Current

10

3

t

stg

1.0
t

on

0.3

t

0.1

f

Switching time t (µs)

0.03

0.01

0.03 0.1 0.3 1.0 3
Collector current I

Ta = 25°C

= 30 V

V

CC

I

= 500 IB1 = –500 I

C

C

(A)

C

(A)

VCE = 3 V

B2

3

2SD1521

100

(°C/W)

j-c

30

10

Transient Thermal Resistance

0.1 to 100 s

3

1.0

0.3

Thermal resistance θ

0.1

0.1 1.0 10 100 (s)

0.1 1.0 10 100 (ms)

0.1 to 100 ms

TC = 25°C

Time t

4

Unit: mm

2.3 ± 0.3

0.8

2.29 ± 0.5

8.0 ± 0.5

120°

120°

φ

120°

3.7 ± 0.7

1.1

2.29 ± 0.5

3.1

11.0 ± 0.5

15.6 ± 0.5

+0.15
–0.1

0.55

2.7 ± 0.4

1.2

Hitachi Code
JEDEC
EIAJ

(reference value)

Weight

TO-126 Mod
—
—

0.67 g

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