Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1516
DESCRIPTION
·Low Collector Saturation Voltage
·Good Linearity of h
·High Switching Speed
·High I
C
APPLICATIONS
·Designed for power amplifier ,power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
FE
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
T
Collector-Base Voltage 130 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current -Continuous 2 A
Collector Current-Peak 5 A
Collector Power Dissipation
@T
=25℃
a
C
Collector Power Dissipation
@T
=25℃
C
Junction Temperature 150
j
1.4
W
25
℃
T
stg
Storage Temperature -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1516
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
f
T
Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 B 80 V
Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.1A 0.5 V
Base-Emitter Saturation Voltage IC= 2A ;IB= 0.1A 1.5 V
Collector Cutoff Current VCB= 100V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 50
DC Current Gain IC= 0.1A ; VCE= 2V 45
DC Current Gain IC= 0.5A ; VCE= 2V 60 260
Current Gain-Bandwidth Product IC= 0.5A; VCE= 10V 2.5 MHz
Switching Times
t
on
Turn-on Time 0.1
μA
μA
μs
t
stg
t
f
Storage Time 2.5
Fall Time
h
Classifications
FE-2
R Q P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
= 0.5A ,IB1= -IB2= 50mA
I
C
0.3
μs
μs
Loading...